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EFFECT TRANSISTOR. NP82P04PLF Datasheet

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EFFECT TRANSISTOR. NP82P04PLF Datasheet







NP82P04PLF TRANSISTOR. Datasheet pdf. Equivalent




NP82P04PLF TRANSISTOR. Datasheet pdf. Equivalent





Part

NP82P04PLF

Description

MOS FIELD EFFECT TRANSISTOR

Manufacture

NEC

Datasheet
Download NP82P04PLF Datasheet


NEC NP82P04PLF

NP82P04PLF; www.DataSheet4U.com DATA SHEET MOS FIE LD EFFECT TRANSISTOR NP82P04PLF SWITC HING P-CHANNEL POWER MOSFET DESCRIPTION The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high cur rent switching applications. ORDER ING INFORMATION PART NUMBER NP82P04PLF- E1-AY NP82P04PLF-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE T.


NEC NP82P04PLF

O-263 (MP-25ZP) Note Pb-free (This prod uct does not contain Pb in external ele ctrode.) FEATURES • Super low on-sta te resistance RDS(on)1 = 8 mΩ MAX. (VG S = −10 V, ID = −41 A) RDS(on)2 = 1 2 mΩ MAX. (VGS = −4.5 V, ID = −41 A) • Low input capacitance Ciss = 500 0 pF TYP. • Built-in gate protection diode (TO-263) ABSOLUTE MAXIMUM RATING S (TA = 25°C) Drain to Source Volt.


NEC NP82P04PLF

age (VGS = 0 V) Gate to Source Voltage ( VDS = 0 V) Drain Current (DC) (TC = 25 C) Drain Current (pulse) Note1 VDSS V GSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg −40 m20 m82 m246 150 1.8 175 −55 to +175 46 212 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) T otal Power Dissipation (TA = 25°C) Cha nnel Temperature Storage Temperature Re petitive Avalanche Current .



Part

NP82P04PLF

Description

MOS FIELD EFFECT TRANSISTOR

Manufacture

NEC

Datasheet
Download NP82P04PLF Datasheet




 NP82P04PLF
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82P04PLF
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP82P04PLF-E1-AY Note
NP82P04PLF-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-263 (MP-25ZP)
FEATURES
Super low on-state resistance
RDS(on)1 = 8 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
Low input capacitance
Ciss = 5000 pF TYP.
Built-in gate protection diode
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg
IAR
EAR
40
m20
m82
m246
150
1.8
175
55 to +175
46
212
Notes 1. PW 10 μs, Duty Cycle 1%
2. Tch 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.0
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18718EJ2V0DS00 (2nd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007





 NP82P04PLF
NP82P04PLF
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 40 V, VGS = 0 V
Gate Leakage Current
IGSS
Gate to Source Threshold Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(th)
| yfs |
RDS(on)1
VGS = m20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 41 A
VGS = 10 V, ID = 41 A
RDS(on)2
VGS = 4.5 V, ID = 41 A
Input Capacitance
Ciss VDS = 10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 41 A,
Rise Time
tr VGS = 10 V,
Turn-off Delay Time
td(off)
RG = 0 Ω
Fall Time
tf
Total Gate Charge
QG VDD = 32 V,
Gate to Source Charge
QGS VGS = 10 V,
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 82 A
IF = 82 A, VGS = 0 V
Reverse Recovery Time
trr IF = 82 A, VGS = 0 V,
Reverse Recovery Charge
Qrr di/dt = 100 A/μs
Note Pulsed test PW 350 μs, Duty Cycle 2%
MIN.
1.5
28
TYP.
2.0
58
6.5
8.3
5000
1100
440
17
18
126
58
90
15
21
0.96
48
62
MAX.
10
m10
2.5
8
12
1.5
UNIT
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
VGS = 20 0 V
50 Ω
VDD
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS()
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS()
VGS
Wave Form
0 10%
VDS()
90%
VDS
VDS
Wave Form 0
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet D18718EJ2V0DS





 NP82P04PLF
NP82P04PLF
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Tch - Channel Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
ID(pulse)
-100
-10
RD(SV(oGnS) L=im1iit0edV)
ID(DC)
DC
PW
= 1i00 μs
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
180
150
120
90
60
30
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
-1
-0.1
TC = 25°C
Single Pulse
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 83.3°C/Wi
100
10
Rth(ch-C) = 1.0°C/Wi
1
0.1
0.01
100 μ
1 m 10 m 100 m
1
Single Pulse
10 100 1000
PW - Pulse Width - s
Data Sheet D18718EJ2V0DS
3



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