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EFFECT TRANSISTOR. UPA2650T1E Datasheet

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EFFECT TRANSISTOR. UPA2650T1E Datasheet






UPA2650T1E TRANSISTOR. Datasheet pdf. Equivalent




UPA2650T1E TRANSISTOR. Datasheet pdf. Equivalent





Part

UPA2650T1E

Description

MOS FIELD EFFECT TRANSISTOR

Manufacture

NEC

Datasheet
Download UPA2650T1E Datasheet


NEC UPA2650T1E

UPA2650T1E; www.DataSheet4U.com DATA SHEET MOS FIE LD EFFECT TRANSISTOR μ PA2650T1E DUAL N-CHANNEL MOSFET FOR SWITCHING DESCRI PTION The μ PA2650T1E is a switching d evice, which can be driven directly by a 4.5 V power source. The μ PA2650T1E contains dual MOSFET which features a l ow on-state resistance and excellent sw itching characteristics, and is suitabl e for applications su.


NEC UPA2650T1E

ch as DC/DC converter of portable machin e and so on. PIN CONNECTION (Top View) 6 MOSFET1 2 5 1 3 4 MOSFET2 FEATUR ES • 4.5 V drive available MOSFET • Low on-state resistance MOSFET MOSFET1 RDS(on)1 = 48 mΩ TYP. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 55 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A) MOSFET2 RDS(on)1 = 50 mΩ TYP. (VGS = 10 V, ID = 3.0 A) RD S(on)2 = 57 mΩ TYP. (VGS .


NEC UPA2650T1E

= 4.5 V, ID = 3.0 A) 1: Gate1 2: Drain1/ Source2 (Heat sink2) 3: Gate2 4: Drain2 (Heat sink1) 5: Drain1/Source2 (Heat s ink2) 6: Source1 ORDERING INFORMATION PART NUMBER PACKAGE 6LD3x3MLP μ PA265 0T1E Marking: A2650 Remark The diode c onnected between the gate and source of the transistor serves as a protector a gainst ESD. When this device actually u sed, an additional .



Part

UPA2650T1E

Description

MOS FIELD EFFECT TRANSISTOR

Manufacture

NEC

Datasheet
Download UPA2650T1E Datasheet




 UPA2650T1E
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2650T1E
DUAL N-CHANNEL MOSFET
FOR SWITCHING
DESCRIPTION
The μ PA2650T1E is a switching device, which can be driven
directly by a 4.5 V power source.
The μ PA2650T1E contains dual MOSFET which features a
low on-state resistance and excellent switching characteristics,
and is suitable for applications such as DC/DC converter of
portable machine and so on.
FEATURES
4.5 V drive available MOSFET
Low on-state resistance MOSFET
MOSFET1 RDS(on)1 = 48 mΩ TYP. (VGS = 10 V, ID = 3.0 A)
RDS(on)2 = 55 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A)
MOSFET2 RDS(on)1 = 50 mΩ TYP. (VGS = 10 V, ID = 3.0 A)
RDS(on)2 = 57 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A)
PIN CONNECTION (Top View)
16
MOSFET1
25
3 4 MOSFET2
1: Gate1
2: Drain1/Source2 (Heat sink2)
3: Gate2
4: Drain2 (Heat sink1)
5: Drain1/Source2 (Heat sink2)
6: Source1
ORDERING INFORMATION
PART NUMBER
μ PA2650T1E
Marking: A2650
PACKAGE
6LD3x3MLP
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD = ±150 V TYP. (C = 200 pF, R = 0 Ω, Single Pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G18749EJ1V0DS00 (1st edition)
Date Published May 2007 NS CP(K)
Printed in Japan
2007





 UPA2650T1E
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
MOSFET1, MOSFET2
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note1
Drain Current (pulse) Note2
Total Power Dissipation Note1
Channel Temperature
Storage Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
20
±12
±3.8
±15.2
1.1
150
55 to +150
V
V
A
A
W
°C
°C
Notes 1. Mounted on a 1 in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick FR-4 board
(Cu pad: 322 mm2 x 70 μm, FR-4: 1452 mm2 x 1.6 mmt)
2. PW 10 μs, Duty Cycle 1%
μ PA2650T1E
FET side: 97°C/W when mounted on a 1 in2 pad of 2 oz copper
2 Data Sheet G18749EJ1V0DS





 UPA2650T1E
μ PA2650T1E
ELECTRICAL CHARACTERISTICS (TA = 25°C)
MOSFET1, MOSFET2
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
Note Pulsed: PW 350 μs, Duty Cycle 2%
VDS = 20 V, VGS = 0 V
VGS = ±12 V, VDS = 0 V
VDS = VGS, ID = 0.25 mA
VDS = 10 V, ID = 1.5 A
VGS = 10 V,
ID = 3.0 A
MOSFET1
MOSFET2
VGS = 4.5 V,
ID = 3.0 A
MOSFET1
MOSFET2
VDS = 10 V,
VGS = 0 V,
f = 1.0 MHz
VDD = 10 V, ID = 1.5 A,
VGS = 4.5 V,
RG = 10 Ω
VDD = 16 V,
VGS = 4.5 V,
ID = 3.0 A
IF = 3.0 A, VGS = 0 V
MIN.
0.6
1.0
TYP.
3.6
48
50
55
57
220
100
40
8.4
7.3
15
3.4
2.9
0.6
1.0
0.89
MAX.
1
±10
2.0
65
65
75
75
UNIT
μA
μA
V
S
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
0 10%
VGS 90%
ID 90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
10%
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
Data Sheet G18749EJ1V0DS
3



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