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SURFACE MOUNT. IRHMJ8250 Datasheet

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SURFACE MOUNT. IRHMJ8250 Datasheet






IRHMJ8250 MOUNT. Datasheet pdf. Equivalent




IRHMJ8250 MOUNT. Datasheet pdf. Equivalent





Part

IRHMJ8250

Description

(IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT



Feature


www.DataSheet4U.com PD-96914 RADIATION HARDENED POWER MOSFET RAD Hard HEXFET SURFACE MOUNT (TO-254AA Tabless) ™ I RHMJ7250 200V, N-CHANNEL ® TECHNOLOGY Product Summary Part Number Radiation Level IRHMJ7250 100K Rads (Si) IRHMJ32 50 300K Rads (Si) IRHMJ4250 IRHMJ8250 6 00K Rads (Si) 1000K Rads (Si) RDS(on) 0 .10 Ω 0.10 Ω 0.10 Ω 0.10 Ω ID 2 6A 26A 26A 26A TO-254AA Tabl.
Manufacture

International Rectifier

Datasheet
Download IRHMJ8250 Datasheet


International Rectifier IRHMJ8250

IRHMJ8250; ess International Rectifier’s RADHard HEXFET® technology provides high perf ormance power MOSFETs for space applica tions. This technology has over a decad e of proven performance and reliability in satellite applications. These devic es have been characterized for both Tot al Dose and Single Event Effects (SEE). The combination of low Rdson and low g ate charge reduces th.


International Rectifier IRHMJ8250

e power losses in switching applications such as DC to DC converters and motor control. These devices retain all of th e well established advantages of MOSFET s such as voltage control, fast switchi ng, ease of paralleling and temperature stability of electrical parameters. F eatures: n n n n n n n n n Single Even t Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge.


International Rectifier IRHMJ8250

Proton Tolerant Simple Drive Requiremen ts Ease of Paralleling Hermetically Sea led Ceramic Eyelets Light Weight Absol ute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Cur rent Continuous Drain Current Pulsed Dr ain Current À Max. Power Dissipation L inear Derating Factor .

Part

IRHMJ8250

Description

(IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT



Feature


www.DataSheet4U.com PD-96914 RADIATION HARDENED POWER MOSFET RAD Hard HEXFET SURFACE MOUNT (TO-254AA Tabless) ™ I RHMJ7250 200V, N-CHANNEL ® TECHNOLOGY Product Summary Part Number Radiation Level IRHMJ7250 100K Rads (Si) IRHMJ32 50 300K Rads (Si) IRHMJ4250 IRHMJ8250 6 00K Rads (Si) 1000K Rads (Si) RDS(on) 0 .10 Ω 0.10 Ω 0.10 Ω 0.10 Ω ID 2 6A 26A 26A 26A TO-254AA Tabl.
Manufacture

International Rectifier

Datasheet
Download IRHMJ8250 Datasheet




 IRHMJ8250
www.DataSheet4U.com
PD-96914
IRHMJ7250
RADIATION HARDENED
200V, N-CHANNEL
POWER MOSFET
RAD HardHEXFET® TECHNOLOGY
SURFACE MOUNT (TO-254AA Tabless)
Product Summary
Part Number Radiation Level
IRHMJ7250 100K Rads (Si)
IRHMJ3250 300K Rads (Si)
IRHMJ4250 600K Rads (Si)
IRHMJ8250 1000K Rads (Si)
RDS(on)
0.10
0.10
0.10
0.10
ID
26A
26A
26A
26A
International Rectifier’s RADHard HEXFET® technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
TO-254AA Tabless
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
26
16
104
150
1.2
±20
500
26
15
5.0
-55 to 150
300 (for 5s)
8.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
12/24/04




 IRHMJ8250
IRHMJ7250
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
200
2.0
8.0
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ Max Units
——
V
0.27 — V/°C
Test Conditions
VGS =0 V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.10
— 0.11
— 4.0
——
— 25
— 250
— 100
— -100
— 170
— 30
— 60
— 33
— 140
— 140
— 140
6.8 —
4700
850
210
V
S( )
µA
nA
nC
ns
VGS = 12V, ID = 16A
VGS = 12V, ID = 26A „
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 16A „
VDS= 160V,VGS=0V
VDS = 160V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 26A
VDS = 100V
VDD = 100V, ID = 26A,
VGS = 12V, RG = 2.35
nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
VGS = 0V, VDS = 25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) À
26
104
A
VSD Diode Forward Voltage
— — 1.4 V
trr Reverse Recovery Time
— — 820 nS
QRR Reverse Recovery Charge
— — 12 µC
Tj = 25°C, IS = 26A, VGS = 0V Ã
Tj = 25°C, IF = 26A, di/dt 100A/µs
VDD 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-sink
Junction-to-Ambient
Min Typ Max Units
— 0.83
0.21 —
°C/W
— — 48
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier website.
For footnotes refer to the last page
2 www.irf.com




 IRHMJ8250
PRraed-IirartaiodniaCtiohnaracteristics
IRHMJ7250
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 600KRads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min Max Min Max
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage Ã
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (TO-254AA)
200
2.0
4.0
100
-100
25
0.094
200 —
1.25 4.5
— 100
— -100
— 50
— 0.149
V
nA
µA
0.10 — 0.155
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=160V, VGS =0V
VGS = 12V, ID =16A
VGS = 12V, ID =16A
VSD Diode Forward Voltage Ã
— 1.4 — 1.4 V
VGS = 0V, IS = 26A
1. Part numbers IRHMJ7250, IRHMJ3250 and IRHMJ4250
2. Part number IRHMJ8250
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
MeV/(mg/cm2))
Cu 28
Br 36.8
Energy
(MeV)
285
305
Range
VDS(V)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
43 190 180 170 125
39 100 100
100
50
200
150
100
50
0
0
-5 -10 -15 -20
VGS
Cu
Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3






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