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Emitting Diode. VSMF3710 Datasheet

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Emitting Diode. VSMF3710 Datasheet






VSMF3710 Diode. Datasheet pdf. Equivalent




VSMF3710 Diode. Datasheet pdf. Equivalent





Part

VSMF3710

Description

High Speed Infrared Emitting Diode



Feature


www.DataSheet4U.com VSMF3710 Vishay Sem iconductors High Speed Infrared Emitti ng Diode, 890 nm RoHS Compliant, Releas ed for Lead (Pb)-free Solder Process De scription VSMF3710 is a high speed infr ared emitting diode in GaAlAs double he tero (DH) technology in a miniature PLC C-2 SMD package. DH technology combines high speed with high radiant power at wavelength of 890 .
Manufacture

Vishay Siliconix

Datasheet
Download VSMF3710 Datasheet


Vishay Siliconix VSMF3710

VSMF3710; nm. Features • • • • • • • • • • • • • High radi ant power High speed: tr = 30 ns High m odulation band width: fc = 12 MHz e3 Pe ak wavelength: λp = 890 nm High reliab ility Low forward voltage Suitable for high pulse current application Wide ang le of half intensity Compatible with au tomatic placement equipment EIA and ICE standard package 8 mm tape and reel standard: .


Vishay Siliconix VSMF3710

GS08 or GS18 Lead (Pb)-free reflow solde ring Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and W EEE 2002/96/EC 94 8553 Applications High speed IR data transmission • High power emitter for low space applic ations • High performance transmissiv e or reflective sensors Order Instruct ions Part VSMF3710 VSMF3710 Ordering co de VSMF3710-GS08 VSMF371.


Vishay Siliconix VSMF3710

0-GS18 Remarks MOQ: 7500 pcs, 1500 pcs p er reel MOQ: 8000 pcs, 8000 pcs per ree l Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Paramete r Reverse voltage Forward current Peak forward current Surge forward current P ower dissipation Junction temperature O perating temperature range Storage temp erature range Soldering temperature The rmal resistance jun.

Part

VSMF3710

Description

High Speed Infrared Emitting Diode



Feature


www.DataSheet4U.com VSMF3710 Vishay Sem iconductors High Speed Infrared Emitti ng Diode, 890 nm RoHS Compliant, Releas ed for Lead (Pb)-free Solder Process De scription VSMF3710 is a high speed infr ared emitting diode in GaAlAs double he tero (DH) technology in a miniature PLC C-2 SMD package. DH technology combines high speed with high radiant power at wavelength of 890 .
Manufacture

Vishay Siliconix

Datasheet
Download VSMF3710 Datasheet




 VSMF3710
www.DataSheet4U.com
VSMF3710
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm
RoHS Compliant, Released for Lead (Pb)-free Solder Process
Description
VSMF3710 is a high speed infrared emitting diode in
GaAlAs double hetero (DH) technology in a miniature
PLCC-2 SMD package.
DH technology combines high speed with high radiant
power at wavelength of 890 nm.
Features
• High radiant power
• High speed: tr = 30 ns
• High modulation band width: fc = 12 MHz
• Peak wavelength: λp = 890 nm
• High reliability
e3
• Low forward voltage
• Suitable for high pulse current application
• Wide angle of half intensity
• Compatible with automatic placement equipment
• EIA and ICE standard package
• 8 mm tape and reel standard: GS08 or GS18
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
94 8553
Applications
• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective
sensors
Order Instructions
Part
VSMF3710
VSMF3710
Ordering code
VSMF3710-GS08
VSMF3710-GS18
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current
Peak forward current
Surge forward current
tp/T = 0.5, tp = 100 µs
tp = 100 µs
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
acc. figure 8, J-STD-020B
Thermal resistance
junction / ambient
Remarks
MOQ: 7500 pcs, 1500 pcs per reel
MOQ: 8000 pcs, 8000 pcs per reel
Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
5
100
200
1
170
100
- 40 to + 85
- 40 to + 100
260
400
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number 81241
Rev. 1.5, 25-Jan-07
www.vishay.com
1




 VSMF3710
VSMF3710
Vishay Semiconductors
180
160
140 R thJA = 400 K/W
120
100
80
60
40
20
0
0
20140
10 20 30 40 50 60 70 80 90 100
Tamb- Ambient Temperature (°C)
Figure 1. Power Dissipation Limit vs. Ambient Temperature
120
100
R thJA = 400 K/W
80
60
40
20
0
0
20141
10 20 30 40 50 60 70 80 90 100
Tamb- Ambient Temperature (°C)
Figure 2. Forward Current Limit vs. Ambient Temperature
Basic Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
Temp. coefficient of VF
IF = 100 mA
Reverse current
VR = 5 V
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Radiant intensity
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
Radiant power
IF = 100 mA, tp = 20 ms
Temp. coefficient of φe
IF = 100 mA
Angle of half intensity
Peak wavelength
IF = 100 mA
Spectral bandwidth
IF = 100 mA
Temp. coefficient of λp
IF = 100 mA
Rise time
IF = 100 mA
Fall time
IF = 100 mA
Virtual source size
Symbol
VF
VF
TKVF
IR
Cj
Ie
Ie
φe
TKφe
ϕ
λp
Δλ
TKλp
tr
tf
Min
6
Typ.
1.4
2.3
- 2.1
125
10
100
40
- 0.35
± 60
890
40
0.25
30
30
0.44
Max Unit
1.6 V
V
mV/K
10 µA
pF
22 mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
mm
www.vishay.com
2
Document Number 81241
Rev. 1.5, 25-Jan-07




 VSMF3710
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
10000
t p /T = 0.005
1000
0.01
100 0.2
0.5
DC
10
0.1
Tamb < 60 °C
0.02
0.05
1
0.01
95 9985
0.1 1
10
t p - Pulse Length (ms)
100
Figure 3. Pulse Forward Current vs. Pulse Duration
1000
100
tp = 100 µs
tp / T = 0.001
10
1
0 1 2 34
18873_1
VF - Forward Voltage (V)
Figure 4. Forward Current vs. Forward Voltage
VSMF3710
Vishay Semiconductors
1.25
1.0
0.75
0.5
0.25
0
800
20082
900
λ - Wavelength (nm)
1000
Figure 6. Relative Radiant Power vs. Wavelength
0° 10° 20°
30°
40°
1.0
0.9 50°
0.8 60°
0.7 70°
8
0.6 0.4 0.2
94 8013
0 0.2
0.4 0.6
Figure 7. Relative Radiant Intensity vs. Angular Displacement
100
10
tp = 100 µs
1
0.1
1
18874
10 100 1000
IF - Forward Pulse Current (mA)
Figure 5. Radiant Intensity vs. Forward Pulse Current
Document Number 81241
Rev. 1.5, 25-Jan-07
www.vishay.com
3






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