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POWER MOSFET. GSC4N01 Datasheet

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POWER MOSFET. GSC4N01 Datasheet






GSC4N01 MOSFET. Datasheet pdf. Equivalent




GSC4N01 MOSFET. Datasheet pdf. Equivalent





Part

GSC4N01

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/12/19 REVISED DA TE : GSC4N01 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 20V 3 0m 6A The GSC4N01 provide the designer with the best combination of fast swit ching, ruggedized device design, low on -resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercia.
Manufacture

GTM

Datasheet
Download GSC4N01 Datasheet


GTM GSC4N01

GSC4N01; l-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Driv e Requirement *Lower On-resistance *Fas t Switching Characteristic Description Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4. 80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8 0.90 0.25 REF. M H L J K G Millimet er Min. Max. 0.10 0..


GTM GSC4N01

25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1 .27 TYP. Absolute Maximum Ratings Para meter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@ 4.5V Continuous Drain Current , VGS@4.5 V Pulsed Drain Current 1 3 3 Symbol VD S VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 20 ±10 6 4.8 20 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipat.


GTM GSC4N01

ion Linear Derating Factor Operating Jun ction and Storage Temperature Range Th ermal Data Parameter Thermal Resistance Junction-ambient Max. Symbol Rthj-amb Value 50 Unit /W GSC4N01 Page: 1/4 I SSUED DATE :2006/12/19 REVISED DATE : Electrical Characteristics (Tj = 25 Par ameter Drain-Source Breakdown Voltage G ate Threshold Voltage Forward Transcond uctance Gate-Sourc.

Part

GSC4N01

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/12/19 REVISED DA TE : GSC4N01 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 20V 3 0m 6A The GSC4N01 provide the designer with the best combination of fast swit ching, ruggedized device design, low on -resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercia.
Manufacture

GTM

Datasheet
Download GSC4N01 Datasheet




 GSC4N01
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/12/19
REVISED DATE :
GSC4N01
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
30m
6A
Description
The GSC4N01 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@4.5V
Continuous Drain Current3, VGS@4.5V
Pulsed Drain Current1
VDS
VGS
ID @TA=25
ID @TA=70
IDM
Total Power Dissipation
Linear Derating Factor
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
20
±10
6
4.8
20
2.5
0.02
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-amb
Value
50
Unit
/W
GSC4N01
Page: 1/4




 GSC4N01
ISSUED DATE :2006/12/19
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
VGS(th)
gfs
IGSS
20
0.6
-
-
- - V VGS=0, ID=250uA
- 1.2 V VDS=VGS, ID=250uA
10 -
S VDS=2.5V, ID=2A
- ±100 nA VGS= ±10V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=20V, VGS=0
- 25 uA VDS=16V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 30 m VGS=4.5V, ID=4.2A
- 40
VGS=2.5V, ID=2.0A
11 16
ID=4.2A
2.0 - nC VDS=12V
3.0 -
VGS=4.5V
13 -
35
45
-
-
VDS=12V
ns
ID=4.2A
VGS=4.5V
50 -
RG=2.3
870 1200
260 -
60 -
VGS=0V
pF VDS=10V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
1.2
Unit Test Conditions
V IS=1.7A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125
/W when mounted on Min. copper pad.
GSC4N01
Page: 2/4




 GSC4N01
Characteristics Curve
ISSUED DATE :2006/12/19
REVISED DATE :
VDS (V)
Fig 1. Typical Output Characteristics
VGS (V)
Fig 2. Transfer Characteristics
ID (A)
Fig 3. On-Resistance v.s. Drain
Current and Gate Voltage
TJ, Temperature ( )
Fig 4. On-Resistance v.s.
Junction Temperature
VGS (V)
Fig 5. On-Resistance
v.s. Gate-Source Voltage
GSC4N01
VDS (V)
Fig 6. Body Diode Characteristics
Page: 3/4






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