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SPB16N50C3 Datasheet, Equivalent, Power Transistor.

Power Transistor

Power Transistor

 

 

 

Part SPB16N50C3
Description Power Transistor
Feature Cool MOS™ Power Transistor Feature
• New revolutionary high voltage technol ogy
• Ultra low gate charge
• Perio dic avalanche rated
• Extreme dv/dt r ated
• Ultra low effective capacitanc es
• Improved transconductance SPB16 N50C3 VDS @ Tjmax 560 V RDS(on) 0.
28 Ω ID 16 A PG-TO263 Type SPB16N50 C3 Package PG-TO263 Ordering Code Q67 040-S4642 Marking 16N50C3 Maximum Rat ings Parameter Symbol Continuous drai n current TC = 25 °C TC = 100 °C Puls ed drain current, tp limited by Tjmax A valanche energy, single pulse ID=8, VDD =50V Avalanche energy, repetitive tAR l imited by Tjmax2) ID=16A, VDD=50 .
Manufacture Infineon Technologies
Datasheet
Download SPB16N50C3 Datasheet
Part SPB16N50C3
Description Power Transistor
Feature Cool MOS™ Power Transistor Feature
• New revolutionary high voltage technol ogy
• Ultra low gate charge
• Perio dic avalanche rated
• Extreme dv/dt r ated
• Ultra low effective capacitanc es
• Improved transconductance SPB16 N50C3 VDS @ Tjmax 560 V RDS(on) 0.
28 Ω ID 16 A PG-TO263 Type SPB16N50 C3 Package PG-TO263 Ordering Code Q67 040-S4642 Marking 16N50C3 Maximum Rat ings Parameter Symbol Continuous drai n current TC = 25 °C TC = 100 °C Puls ed drain current, tp limited by Tjmax A valanche energy, single pulse ID=8, VDD =50V Avalanche energy, repetitive tAR l imited by Tjmax2) ID=16A, VDD=50 .
Manufacture Infineon Technologies
Datasheet
Download SPB16N50C3 Datasheet

SPB16N50C3

SPB16N50C3
SPB16N50C3

SPB16N50C3

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