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GT2604 Datasheet, Equivalent, POWER MOSFET.N-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Part | GT2604 |
|---|---|
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Feature | www. DataSheet4U. com Pb Free Plating Pro duct ISSUED DATE :2005/05/18 REVISED DA TE : GT2604 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 45 m 5. 5A The GT2604 utilized advanced pr ocessing techniques to achieve the lowe st possible on-resistance, extremely ef ficient and cost-effectiveness device. The GT2604 is universally used for all commercial-industrial applications. De scription *Fast Switching Characterist ic *Lower Gate Charge *Small Footprint & Low Profile Package Features Packag e Dimensions REF. A B C D E F Millime ter Min. 2. 70 2. 60 1. 40 0. 30 0 0° Max. 3. 10 3. 00 1. 80 . |
| Manufacture | GTM |
| Datasheet |
| Part | GT2604 |
|---|---|
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Feature | www. DataSheet4U. com Pb Free Plating Pro duct ISSUED DATE :2005/05/18 REVISED DA TE : GT2604 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 45 m 5. 5A The GT2604 utilized advanced pr ocessing techniques to achieve the lowe st possible on-resistance, extremely ef ficient and cost-effectiveness device. The GT2604 is universally used for all commercial-industrial applications. De scription *Fast Switching Characterist ic *Lower Gate Charge *Small Footprint & Low Profile Package Features Packag e Dimensions REF. A B C D E F Millime ter Min. 2. 70 2. 60 1. 40 0. 30 0 0° Max. 3. 10 3. 00 1. 80 . |
| Manufacture | GTM |
| Datasheet |
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