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N32T1630C1C Datasheet, Equivalent, Pseudo SRAM.32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM 32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM |
　
　
　
| Part | N32T1630C1C |
|---|---|
| Description | 32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM |
| Feature | www. DataSheet4U. com NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220 , Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www. nanoamp. com N32T 1630C1C 32Mb Ultra-Low Power Asynchron ous CMOS Pseudo SRAM w/ Page Mode Opera tion (2M x 16 bit) Overview The N32T16 30C1C is an integrated memory device co ntaining a 32 Mbit SRAM built using a s elf-refresh DRAM array organized as 2,0 97,152 words by 16 bits. The device is designed and fabricated using NanoAmp†™s advanced CMOS technology to provide both high-speed performance and ultra-l ow power. It is designed to be identica l in operation a . |
| Manufacture | NanoAmp Solutions |
| Datasheet |
| Part | N32T1630C1C |
|---|---|
| Description | 32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM |
| Feature | www. DataSheet4U. com NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220 , Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www. nanoamp. com N32T 1630C1C 32Mb Ultra-Low Power Asynchron ous CMOS Pseudo SRAM w/ Page Mode Opera tion (2M x 16 bit) Overview The N32T16 30C1C is an integrated memory device co ntaining a 32 Mbit SRAM built using a s elf-refresh DRAM array organized as 2,0 97,152 words by 16 bits. The device is designed and fabricated using NanoAmp†™s advanced CMOS technology to provide both high-speed performance and ultra-l ow power. It is designed to be identica l in operation a . |
| Manufacture | NanoAmp Solutions |
| Datasheet |
　
　
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