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NTE455 Datasheet, Equivalent, Effect Transistor.

N-Channel Silicon Dual-Gate MOS Field Effect Transistor

N-Channel Silicon Dual-Gate MOS Field Effect Transistor

 

 

 

Part NTE455
Description N-Channel Silicon Dual-Gate MOS Field Effect Transistor
Feature www.
DataSheet4U.
com NTE455 N−Channel Silicon Dual−Gate MOS Field Effect Tr ansistor (MOSFET) Description: The NTE4 55 is an N−Channel silicon dual−gat e MOSFET designed for use as an RF ampl ifier in UHF TV tuners.
This device is especially recommended for use in half wave length resonator type tuners.
Feat ures: D Low Reverse Transfer Capacitanc e: Crss = 0.
02pF Typ D High Power Gain: Gps = 18dB Typ D Low Noise Figure: NF = 3.
8dB Typ Absolute Maximum Ratings: ( TA = +25°C unless otherwise specified) Drain−Source Voltage, VDSX .
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Manufacture NTE Electronics
Datasheet
Download NTE455 Datasheet
Part NTE455
Description N-Channel Silicon Dual-Gate MOS Field Effect Transistor
Feature www.
DataSheet4U.
com NTE455 N−Channel Silicon Dual−Gate MOS Field Effect Tr ansistor (MOSFET) Description: The NTE4 55 is an N−Channel silicon dual−gat e MOSFET designed for use as an RF ampl ifier in UHF TV tuners.
This device is especially recommended for use in half wave length resonator type tuners.
Feat ures: D Low Reverse Transfer Capacitanc e: Crss = 0.
02pF Typ D High Power Gain: Gps = 18dB Typ D Low Noise Figure: NF = 3.
8dB Typ Absolute Maximum Ratings: ( TA = +25°C unless otherwise specified) Drain−Source Voltage, VDSX .
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Manufacture NTE Electronics
Datasheet
Download NTE455 Datasheet

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