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NTE455 Datasheet, Equivalent, Effect Transistor.N-Channel Silicon Dual-Gate MOS Field Effect Transistor N-Channel Silicon Dual-Gate MOS Field Effect Transistor |
| Part | NTE455 |
|---|---|
| Description | N-Channel Silicon Dual-Gate MOS Field Effect Transistor |
| Feature | www. DataSheet4U. com NTE455 N−Channel Silicon Dual−Gate MOS Field Effect Tr ansistor (MOSFET) Description: The NTE4 55 is an N−Channel silicon dual−gat e MOSFET designed for use as an RF ampl ifier in UHF TV tuners. This device is especially recommended for use in half wave length resonator type tuners. Feat ures: D Low Reverse Transfer Capacitanc e: Crss = 0. 02pF Typ D High Power Gain: Gps = 18dB Typ D Low Noise Figure: NF = 3. 8dB Typ Absolute Maximum Ratings: ( TA = +25°C unless otherwise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
| Manufacture | NTE Electronics |
| Datasheet |
| Part | NTE455 |
|---|---|
| Description | N-Channel Silicon Dual-Gate MOS Field Effect Transistor |
| Feature | www. DataSheet4U. com NTE455 N−Channel Silicon Dual−Gate MOS Field Effect Tr ansistor (MOSFET) Description: The NTE4 55 is an N−Channel silicon dual−gat e MOSFET designed for use as an RF ampl ifier in UHF TV tuners. This device is especially recommended for use in half wave length resonator type tuners. Feat ures: D Low Reverse Transfer Capacitanc e: Crss = 0. 02pF Typ D High Power Gain: Gps = 18dB Typ D Low Noise Figure: NF = 3. 8dB Typ Absolute Maximum Ratings: ( TA = +25°C unless otherwise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
| Manufacture | NTE Electronics |
| Datasheet |
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