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SIGC104T170R2C Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part SIGC104T170R2C
Description IGBT
Feature www.
DataSheet4U.
com SIGC104T170R2C IGBT Chip in NPT-technology FEATURES:
• 1 700V NPT technology
• 280µm chip
• short circuit prove
• positive tempe rature coefficient
• easy paralleling C This chip is used for:
• chip onl y Applications:
• drives G E Chip Type SIGC104T170R2C VCE 1700V ICn 50A Die Size 10.
12 x 10.
18 mm2 Package s awn on foil Ordering Code Q67041-A4695 A001 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size G ate pad size Thickness Wafer size Flat position Max.
possible chips per wafer P assivation frontside Emitter metalizati on Collector metalization Die .
Manufacture Infineon Technologies
Datasheet
Download SIGC104T170R2C Datasheet
Part SIGC104T170R2C
Description IGBT
Feature www.
DataSheet4U.
com SIGC104T170R2C IGBT Chip in NPT-technology FEATURES:
• 1 700V NPT technology
• 280µm chip
• short circuit prove
• positive tempe rature coefficient
• easy paralleling C This chip is used for:
• chip onl y Applications:
• drives G E Chip Type SIGC104T170R2C VCE 1700V ICn 50A Die Size 10.
12 x 10.
18 mm2 Package s awn on foil Ordering Code Q67041-A4695 A001 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size G ate pad size Thickness Wafer size Flat position Max.
possible chips per wafer P assivation frontside Emitter metalizati on Collector metalization Die .
Manufacture Infineon Technologies
Datasheet
Download SIGC104T170R2C Datasheet

SIGC104T170R2C

SIGC104T170R2C
SIGC104T170R2C

SIGC104T170R2C

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