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SIGC104T170R2C Datasheet, Equivalent, IGBT.IGBT IGBT |
| Part | SIGC104T170R2C |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC104T170R2C IGBT Chip in NPT-technology FEATURES: • 1 700V NPT technology • 280µm chip • short circuit prove • positive tempe rature coefficient • easy paralleling C This chip is used for: • chip onl y Applications: • drives G E Chip Type SIGC104T170R2C VCE 1700V ICn 50A Die Size 10. 12 x 10. 18 mm2 Package s awn on foil Ordering Code Q67041-A4695 A001 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size G ate pad size Thickness Wafer size Flat position Max. possible chips per wafer P assivation frontside Emitter metalizati on Collector metalization Die . |
| Manufacture | Infineon Technologies |
| Datasheet |
| Part | SIGC104T170R2C |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC104T170R2C IGBT Chip in NPT-technology FEATURES: • 1 700V NPT technology • 280µm chip • short circuit prove • positive tempe rature coefficient • easy paralleling C This chip is used for: • chip onl y Applications: • drives G E Chip Type SIGC104T170R2C VCE 1700V ICn 50A Die Size 10. 12 x 10. 18 mm2 Package s awn on foil Ordering Code Q67041-A4695 A001 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size G ate pad size Thickness Wafer size Flat position Max. possible chips per wafer P assivation frontside Emitter metalizati on Collector metalization Die . |
| Manufacture | Infineon Technologies |
| Datasheet |
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