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GTT2610 Datasheet, Equivalent, POWER MOSFET.N-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Part | GTT2610 |
|---|---|
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Feature | www. DataSheet4U. com Pb Free Plating Pro duct ISSUED DATE :2006/06/13 REVISED DA TE : GTT2610 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 60V 9 0m 3A The GTT2610 utilized advanced pr ocessing techniques to achieve the lowe st possible on-resistance, extremely ef ficient and cost-effectiveness device. The GTT2610 is universally used for all commercial-industrial applications. D escription Features *Simple Drive Req uirement *Small Package Outline Packag e Dimensions REF. A A1 A2 c D E E1 Mi llimeter Min. Max. 1. 10 MAX. 0 0. 10 0. 7 0 1. 00 0. 12 REF. 2. 70 3. 10 2. 60 3. 00 1. 40 1. 80 REF. . |
| Manufacture | GTM |
| Datasheet |
| Part | GTT2610 |
|---|---|
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Feature | www. DataSheet4U. com Pb Free Plating Pro duct ISSUED DATE :2006/06/13 REVISED DA TE : GTT2610 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 60V 9 0m 3A The GTT2610 utilized advanced pr ocessing techniques to achieve the lowe st possible on-resistance, extremely ef ficient and cost-effectiveness device. The GTT2610 is universally used for all commercial-industrial applications. D escription Features *Simple Drive Req uirement *Small Package Outline Packag e Dimensions REF. A A1 A2 c D E E1 Mi llimeter Min. Max. 1. 10 MAX. 0 0. 10 0. 7 0 1. 00 0. 12 REF. 2. 70 3. 10 2. 60 3. 00 1. 40 1. 80 REF. . |
| Manufacture | GTM |
| Datasheet |
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