Infrared Light Emitting Diodes
LNA2802L
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.0 max.
2-0.8 max. 2-0.5±0.1 0.5±0.1
For optical control systems Features
High-power output, high-efficiency : PO = 5 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Good radiant power output linearity with respect to i...
