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LNA4801L
GaAlAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes LNA4801L GaAlAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max. 2-0.8 max. 2-0.5±0.1 0.5±0.1 (1.5) 2.54 1.7 For optical control systems Features Fast response and high-speed modulation capability : fC = 20 MHz (typ.) Wide directivity : θ = 22 deg. (typ.) Transparent epoxy resin package ø3.8±0.2 ø3.0±0.2 Absolu...
Panasonic Semiconductor
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LNA4801L
GaAlAs Infrared Light Emitting Diode
- Panasonic Semiconductor
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