2SA2197 Datasheet PDF


Part Number

2SA2197

Description

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

Manufacture

Sanyo Semicon Device

Total Page 5 Pages
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Features Datasheet pdf www.DataSheet4U.com Ordering number : E NA0463 2SA2197 / 2SC6102 SANYO Semico nductors DATA SHEET 2SA2197 / 2SC6102 Applications • PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Con verter Applications Relay drivers, lam p drivers, motor drivers, flash. Featu res • • • • • Adoption of MB IT process. Large current capacitance. Low collector-to-emitter saturation vol tage. High-speed switching. High allowa ble power dissipation. Specifications ( ) : 2SA2197 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage E mitter-to-Base Voltage Collector Curren t Collector Current (Pulse) Base Curren t Collector Dissipation Junction Temperature Stor.
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2SA2197 Datasheet
www.DataSheet4U.com
Ordering number : ENA0463
2SA2197 / 2SC6102
SANYO Semiconductors
DATA SHEET
2SA2197 / 2SC6102 PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications ( ) : 2SA2197
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=(--)30V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)500mA
VCE=(--)10V, IC=(--)500mA
VCB=(--)10V, f=1MHz
Ratings
(--30)40
(--)30
(--)6
(--)7
(--)9
(--)1.2
1
10
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
min
200
Ratings
typ
max
Unit
(--)0.1 µA
(--)0.1 µA
560
(250)290
MHz
(52)40
pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92706EA MS IM TC-00000207 No. A0463-1/5




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