2SK4100LS MOSFET Datasheet

2SK4100LS Datasheet, PDF, Equivalent


Part Number

2SK4100LS

Description

N-Channel Silicon MOSFET

Manufacture

Sanyo Semicon Device

Total Page 5 Pages
Datasheet
Download 2SK4100LS Datasheet


2SK4100LS
www.DataSheet4U.com
Ordering number : ENA0778
2SK4100LS
SANYO Semiconductors
DATA SHEET
2SK4100LS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
Adoption of high reliability HVP process.
Attachment workability is good by Mica-less package.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *3
Avalanche Current *4
*1 Shows chip capability
*2 Package limited
*3 VDD=99V, L=5mH, IAV=6A
*4 L5mH, single pulse
Marking : K4100
Symbol
VDSS
VGSS
IDc*1
IDpack*2
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
Limited only by maximum temperature
SANYO’s ideal heat dissipation condition
PW10µs, duty cycle1%
Tc=25°C (SANYO’s ideal heat dissipation condition)
Ratings
650
±30
6
5.6
24
2.0
33
150
--55 to +150
105
6
Unit
V
V
A
A
A
W
W
°C
°C
mJ
A
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60607QB TI IM TC-00000729 No. A0778-1/5

2SK4100LS
2SK4100LS
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=10mA, VGS=0V
VDS=520V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3A
ID=3A, VGS=10V
VDS=30V, f=1MHz
VDS=30V, f=1MHz
VDS=30V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=200V, VGS=10V, ID=6A
VDS=200V, VGS=10V, ID=6A
VDS=200V, VGS=10V, ID=6A
IS=6A, VGS=0V
Package Dimensions
unit : mm (typ)
7509-002
10.0
3.2
4.5
2.8
min
650
Ratings
typ
3
24
1.05
600
110
24
18
41
78
28
23
4.5
13
0.9
max
100
±100
5
1.35
1.2
Unit
V
µA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
0.9
1.2
0.75
123
2.55 2.55
1.2
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.0.5%
G
VDD=200V
ID=3A
RL=66.7
D VOUT
2SK4100LS
P.G RGS=50S
Avalanche Resistance Test Circuit
50
RG
L
2SK4100LS
10V
0V 50
VDD
No. A0778-2/5


Features www.DataSheet4U.com Ordering number : E NA0778 2SK4100LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4100LS Features • • • • Gen eral-Purpose Switching Device Applicati ons Low ON-resistance, low input capac itance, ultrahigh-speed switching. Adop tion of high reliability HVP process. A ttachment workability is good by Mica-l ess package. Avalanche resistance guara ntee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to- Source Voltage Gate-to-Source Voltage D rain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te mperature Storage Temperature Avalanche Energy (Single Pulse) *3 Avalanche Cur rent *4 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only b y maximum temperature SANYO’s ideal h eat dissipation condition PW≤10µs, d uty cycle≤1% Tc=25°C (SANYO’s idea l heat dissipation condition) Condition s Ratings 650 ±30 6 5.6 24 2.0 33 150 --55 to +150 105 6 Unit V V A A A W W °C °C mJ A *1 Shows chip capability *2 Packa.
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