Transistor. 2SA2181 Datasheet

2SA2181 Datasheet PDF


Part

2SA2181

Description

PNP Epitaxial Planar Silicon Transistor

Manufacture

Sanyo Semicon Device

Page 4 Pages
Datasheet
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2SA2181 Datasheet
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Ordering number : EN8527
2SA2181
PNP Epitaxial Planar Silicon Transistor
2SA2181 50V / 15A High-Speed Switching
Applications
Applications
High-speed switching applications (switching regulator, driver circuit).
Features
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
Conditions
VCB=--40V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--330mA
VCE=--2V, IC=--10A
VCE=--10V, IC=--700mA
VCB=--10V, f=1MHz
Ratings
--50
--50
--6
--15
--20
--3
2
25
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
min
200
50
Ratings
typ
max
--10
--10
500
Unit
µA
µA
120 MHz
140 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2505FA MS IM TB-00001826 No.8527-1/4

2SA2181 Datasheet
2SA2181
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=--7.5A, IB=--375mA
IC=--7.5A, IB=--375mA
IC=--100µA, IE=0A
IC=--1mA, RBE=
IE=--100µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ
--250
--50
--50
--6
80
300
45
max
--500
--1.2
Unit
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
7508-002
10.0
3.2
4.5
2.8
1.6
1.2
0.75 0.7
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
IB1
IB2
VR RB
50+
100µF
OUTPUT
+
470µF
RL
VBE=5V
VCC= --25V
IC=20IB1= --20IB2= --7A
123
2.55 2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
IC -- VCE
--15
--14
--13
--12
--11
--250mA
--300mA
--350mA
--200mA
--150mA
--10
--9
--450mA--400mA
--100mA
--8
--7 --50mA
--6
--5
--4 --20mA
--3
--2
--1
0
IB=0mA
0
--0.5
--1.0
--1.5
--2.0
Collector-to-Emitter Voltage, VCE -- V IT09987
IC -- VCE
--8
--7
--100mA
--120mA
--80mA
--60mA
--6
--140mA
--40mA
--5 --160mA
--4
--20mA
--3
--2 --10mA
--1
0 IB=0mA
0
--0.2
--0.4
--0.6
--0.8
--1.0
Collector-to-Emitter Voltage, VCE -- V IT09988
No.8527-2/4


Features Datasheet pdf www.DataSheet4U.com Ordering number : E N8527 2SA2181 PNP Epitaxial Planar Si licon Transistor 2SA2181 Applications • 50V / 15A High-Speed Switching App lications High-speed switching applica tions (switching regulator, driver circ uit). Features • • • • Adopti on of MBIT processes. Large current cap acitance. Low collector-to-emitter satu ration voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Bas e Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Curre nt Collector Current (Pulse) Base Curre nt Collector Dissipation Junction Tempe rature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings --50 --50 --6 --15 --20 --3 2 25 150 --55 to +150 Unit V V V A A A W W °C °C Electrical Charac teristics at Ta=25°C Parameter Collect or Cutoff Current Emitter Cutoff Curren t DC Current Gain Gain-Bandwidth Produc t Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob Conditions VCB=-40V, IE.
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