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IGBT Module. CM1200E4C-34N Datasheet

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IGBT Module. CM1200E4C-34N Datasheet






CM1200E4C-34N Module. Datasheet pdf. Equivalent




CM1200E4C-34N Module. Datasheet pdf. Equivalent





Part

CM1200E4C-34N

Description

IGBT Module



Feature


www.DataSheet4U.com MITSUBISHI HVIGBT M ODULES CM1200E4C-34N 4th-Version HVIGB T (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHIN G USE INSULATED TYPE CM1200E4C-34N q IC .................................... ............................ 1200A q VC ES .................................... ................... 1700V q Insulated T ype q 1-element in.
Manufacture

Mitsubishi Electric

Datasheet
Download CM1200E4C-34N Datasheet


Mitsubishi Electric CM1200E4C-34N

CM1200E4C-34N; a Pack (for brake) q AISiC Baseplate q Trench Gate IGBT : CSTBT™ q Soft Reve rse Recovery Diode APPLICATION Tractio n drives, DC choppers, Dynamic braking choppers OUTLINE DRAWING & CIRCUIT DIAG RAM 130±0.5 57±0.25 57±0.25 4 - M8 N UTS Dimensions in mm 4(C) C 2(A) 4 2 124±0.25 140±0.5 20±0.1 40±0.2 G E 3(E) 1(K) 3 1 C E G CIRCUIT DI AGRAM 3 - M4 NUTS 10.65±0..


Mitsubishi Electric CM1200E4C-34N

2 48.8±0.2 10.35±0.2 6 - φ 7 MOUNTI NG HOLES 61.5±0.3 screwing depth min. 7.7 screwing depth min. 16.5 15±0.2 40±0.2 5.2±0.2 18±0.2 38 +1 –0 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 29.5±0.5 5±0.2 28 –0 +1 M ITSUBISHI HVIGBT MODULES CM1200E4C-34N 4th-Version HVIGBT (High Voltage Insul ated Gate Bipolar Transistor) Mo.


Mitsubishi Electric CM1200E4C-34N

dules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (No te 3) Tj Top Tstg Viso tpsc Item Collec tor-emitter voltage Gate-emitter voltag e Collector current Emitter current Max imum power dissipation Junction tempera ture Operating temperature Storage temp erature Isolation voltage Maximum short circuit pulse wid.

Part

CM1200E4C-34N

Description

IGBT Module



Feature


www.DataSheet4U.com MITSUBISHI HVIGBT M ODULES CM1200E4C-34N 4th-Version HVIGB T (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHIN G USE INSULATED TYPE CM1200E4C-34N q IC .................................... ............................ 1200A q VC ES .................................... ................... 1700V q Insulated T ype q 1-element in.
Manufacture

Mitsubishi Electric

Datasheet
Download CM1200E4C-34N Datasheet




 CM1200E4C-34N
www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
CM1200E4C-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200E4C-34N
q IC ................................................................ 1200A
q VCES ....................................................... 1700V
q Insulated Type
q 1-element in a Pack (for brake)
q AISiC Baseplate
q Trench Gate IGBT : CSTBT™
q Soft Reverse Recovery Diode
APPLICATION
Traction drives, DC choppers, Dynamic braking choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
57±0.25
130±0.5
57±0.25
4 - M8 NUTS
Dimensions in mm
42
31
C EG
4(C)
C
2(A)
G
E
3(E)
1(K)
CIRCUIT DIAGRAM
3 - M4 NUTS
screwing depth
min. 7.7
10.65±0.2
48.8±0.2
10.35±0.2
61.5±0.3
18±0.2
6 - φ 7 MOUNTING HOLES
screwing depth
min. 16.5
5.2±0.2
40±0.2
15±0.2
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005




 CM1200E4C-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200E4C-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Top
Tstg
Viso
tpsc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum power dissipation
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
VGE = 0V, Tj = 25°C
VCE = 0V, Tj = 25°C
TC = 75°C
Pulse
Conditions
Pulse
TC = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
VCC = 1200V, VCES 1700V, VGE = 15V
Tj = 125°C
(Note 1)
(Note 1)
Ratings
1700
±20
1200
2400
1200
2400
6500
40 ~ +150
40 ~ +125
40 ~ +125
4000
10
Unit
V
V
A
A
A
A
W
°C
°C
°C
V
µs
ELECTRICAL CHARACTERISTICS
Symbol
Item
ICES
VGE(th)
Collector cut-off current
Gate-emitter
threshold voltage
Conditions
VCE = VCES, VGE = 0V, Tj = 25°C
IC = 120mA, VCE = 10V, Tj = 25°C
Limits
Min Typ
——
6.0 7.0
IGES
VCE(sat)
Cies
Coes
Cres
Qg
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
VEC (Note 2) Emitter-collector voltage
td(on)
tr
Eon
td(off)
tf
Eoff
trr (Note 2)
Irr (Note 2)
Qrr (Note 2)
Erec (Note 2)
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
VF (Note 5) Forward voltage
trr (Note 5)
Irr (Note 5)
Qrr (Note 5)
Erec (Note 5)
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
VGE = VGES, VCE = 0V, Tj = 25°C
IC = 1200A, VGE = 15V, Tj = 25°C
IC = 1200A, VGE = 15V, Tj = 125°C
(Note 4)
(Note 4)
VCE = 10V, f = 100kHz
VGE = 0V, Tj = 25°C
VCC = 850V, IC = 1200A, VGE = 15V, Tj = 25°C
IE = 1200A, VGE = 0V, Tj = 25°C
(Note 4)
IE = 1200A, VGE = 0V, Tj = 125°C
(Note 4)
VCC = 850V, IC = 1200A, VGE = ±15V
RG(on) = 0.6, Tj = 125°C, Ls = 150nH
Inductive load
VCC = 850V, IC = 1200A, VGE = ±15V
RG(off) = 3.3, Tj = 125°C, Ls = 150nH
Inductive load
VCC = 850V, IC = 1200A, VGE = ±15V
RG(on) = 0.6, Tj = 125°C, Ls = 150nH
Inductive load
IE = 1200A, VGE = 0V, Tj = 25°C
IE = 1200A, VGE = 0V, Tj = 125°C
(Note 4)
(Note 4)
VCC = 850V, IC = 1200A, VGE = ±15V
di/dt = 2900A/µs, Tj = 125°C, Ls = 150nH
Inductive load
2.15
2.40
176
9.6
2.8
6.8
2.60
2.30
1.00
0.40
380
1.20
0.30
360
1.00
560
300
220
2.60
2.30
1.00
560
300
220
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. The symbols represent characteristics of the clamp diode (Clamp-Di).
Max
4
8.0
0.5
2.80
3.30
3.30
Unit
mA
V
µA
V
nF
nF
nF
µC
V
µs
µs
mJ/pulse
µs
µs
mJ/pulse
µs
A
µC
mJ/pulse
V
µs
A
µC
mJ/pulse
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005




 CM1200E4C-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200E4C-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Item
Rth(j-c)Q
Rth(j-c)R
Thermal resistance
Rth(c-f)
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Junction to Case, Clamp-Di part
Case to Fin, λgrease = 1W/m·K
Limits
Unit
Min Typ Max
— — 19.0 K/kW
— — 42.0
K/kW
42.0
16.0 K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
Conditions
M
CTI
da
ds
LC-E(int)
RC-E(int)
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
TC = 25°C
Min
7.0
3.0
1.0
600
19.5
32.0
Limits
Typ
0.8
30
0.28
Max
20.0
6.0
3.0
Unit
N·m
kg
mm
mm
nH
m
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005



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