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IGBT Module. CM1200HA-66H Datasheet

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IGBT Module. CM1200HA-66H Datasheet






CM1200HA-66H Module. Datasheet pdf. Equivalent




CM1200HA-66H Module. Datasheet pdf. Equivalent





Part

CM1200HA-66H

Description

IGBT Module



Feature


www.DataSheet4U.com PRE . ation change . ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice para me Som ARY LIMIN MITSUBISHI HVIGBT MO DULES CM1200HA-66H HIGH POWER SWITCHIN G USE INSULATED TYPE HVIGBT (High Volt age Insulated Gate Bipolar Transistor) Modules CM1200HA-66H q IC ........... ....................................... .............. 120.
Manufacture

Mitsubishi Electric

Datasheet
Download CM1200HA-66H Datasheet


Mitsubishi Electric CM1200HA-66H

CM1200HA-66H; 0A q VCES .............................. ......................... 3300V q Insul ated Type q 1-element in a pack APPLIC ATION Inverters, Converters, DC chopper s, Induction heating, DC to DC converte rs. OUTLINE DRAWING & CIRCUIT DIAGRAM D imensions in mm 57±0.25 190 171 57± 0.25 57±0.25 6 - M8 NUTS 20 E E 40 124±0.25 140 G C C C C C CM E E E C E G CIRCUIT.


Mitsubishi Electric CM1200HA-66H

DIAGRAM 20.25 41.25 3 - M4 NUTS 79.4 8 - φ 7MOUNTING HOLES 61.5 13 61.5 5. 2 38 15 40 28 HVIGBT MODULES (High V oltage Insulated Gate Bipolar Transisto r Modules) 5 LABEL 30 Aug.1998 PRE . ation nge. pecific to cha final s s ubject a t o re is is nic limits a e: T h tr Notice parame Som ARY LIMIN MITS UBISHI HVIGBT MODULES CM1200HA-66H HIG H POWER SWITCHING U.


Mitsubishi Electric CM1200HA-66H

SE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modu les MAXIMUM RATINGS (Tj = 25°C) Symbo l VCES VGES IC ICM IE (Note 1) IEM (Not e 1) PC (Note 3) Tj Tstg Viso — — P arameter Collector-emitter voltage Gate -emitter voltage Collector current Emit ter current Maximum collector dissipati on Junction temperature Storage tempera ture Isolation voltage .

Part

CM1200HA-66H

Description

IGBT Module



Feature


www.DataSheet4U.com PRE . ation change . ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice para me Som ARY LIMIN MITSUBISHI HVIGBT MO DULES CM1200HA-66H HIGH POWER SWITCHIN G USE INSULATED TYPE HVIGBT (High Volt age Insulated Gate Bipolar Transistor) Modules CM1200HA-66H q IC ........... ....................................... .............. 120.
Manufacture

Mitsubishi Electric

Datasheet
Download CM1200HA-66H Datasheet




 CM1200HA-66H
www.DataSheet4U.com
PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING USE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200HA-66H
q IC ................................................................ 1200A
q VCES ....................................................... 3300V
q Insulated Type
q 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
190
171
57±0.25
57±0.25
6 - M8 NUTS
CC
CM E
E
C EG
3 - M4 NUTS
79.4
20.25
41.25
EC
E
C
G
C
E
CIRCUIT DIAGRAM
8 - φ 7MOUNTING HOLES
61.5 61.5
13
15
40
5.2
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Aug.1998




 CM1200HA-66H
PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Conditions
Main terminal to Base, AC for 1 minute
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
(Note 2)
(Note 2)
Ratings
3300
±20
1200
2400
1200
2400
10420
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 8.24
2.84 ~ 3.43
0.88 ~ 1.08
2.2
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test conditions
Min
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
Gate-emitter
threshold voltage
IC = 120mA, VCE = 10V
4.5
IGES
Gate-leakage current
VGE = VGES, VCE = 0V
VCE(sat)
Collector-emitter
saturation voltage
Tj = 25°C
Tj = 125°C
IC = 1200A, VGE = 15V
(Note 4)
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
QG Total gate charge
VCC = 1650V, IC = 1200A, VGE = 15V
td (on)
Turn-on delay time
VCC = 1650V, IC = 1200A
tr Turn-on rise time
VGE1 = VGE2 = 15V
td (off)
tf
Turn-off delay time
Turn-off fall time
RG = 2.5
Resistive load switching operation
VEC (Note 1) Emitter-collector voltage
IE = 1200A, VGE = 0V
trr (Note 1) Reverse recovery time
IE = 1200A
Qrr (Note 1)
Rth(j-c)Q
Rth(j-c)R
Reverse recovery charge
Thermal resistance
die / dt = –2400A / µs
IGBT part
FWDi part
Rth(c-f) Contact thermal resistance Case to fin, conductive grease applied
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Limits
Typ
6.0
4.40
4.80
130
7
3
10
3.30
300
0.006
Max
15
Unit
mA
7.5
0.5
5.72
1.60
2.00
2.50
1.00
4.29
1.20
0.012
0.024
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
°C/W
°C/W
°C/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Aug.1998




 CM1200HA-66H
PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
2400
2000
1600
1200
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj=25°C
VGE=13V
VGE=14V
VGE=15V
VGE=20V
VGE=12V
VGE=11V
VGE=10V
800
VGE=9V
400
VGE=8V
VGE=7V
0
0 1 2 3 4 5 6 7 8 9 10
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
2400
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE=10V
2000
1600
1200
800
400
Tj = 25°C
Tj = 125°C
0
0 2 4 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
8
VGE=15V
6
4
2
Tj = 25°C
Tj = 125°C
0
0 500 1000 1500 2000 2500
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
104
7 Tj=25°C
5
3
2
103
7
5
3
2
102
7
5
3
2
101
012345
EMITTER-COLLECTOR VOLTAGE VEC (V)
Aug.1998



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