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Freescale Semiconductor Technical Data
Document Number: MRF6P18190H Rev. 0, 4/2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class A...
