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Dual MOSFET. APM3048ADU4 Datasheet

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Dual MOSFET. APM3048ADU4 Datasheet
















APM3048ADU4 MOSFET. Datasheet pdf. Equivalent













Part

APM3048ADU4

Description

Dual MOSFET



Feature


www.DataSheet4U.com APM3048ADU4 Dual En hancement Mode MOSFET (N-and P-Channel) Features • N-Channel 30V/9A, RDS(ON )=21mΩ (typ.) @ VGS=10V RDS(ON)=27m (typ.) @ VGS=4.5V Pin Description D1 D2 • P-Channel -30V/-9A, RDS(ON)=3 6mΩ (typ.) @ VGS= -10V RDS(ON)=46mΩ (typ.) @ VGS=-4.5V S1 G1 S2 G2 • • • Top View of TO-252-4 (3) D1 (3) D2 Super High Dense Cell Design R.
Manufacture

Anpec Electronics

Datasheet
Download APM3048ADU4 Datasheet


Anpec Electronics APM3048ADU4

APM3048ADU4; eliable and Rugged ESD Rating : 2KV HBM Lead Free Available (RoHS Compliant) (2 ) G1 (5) G2 Applications • Power Man agement in LCD monitor/TV S1 (1) S2 ( 4) N MOS P MOS Ordering and Marking Information APM3048AD Lead Free Code Ha ndling Code Temp. Range Package Code Pa ckage Code U4 : TO-252-4 Operating Junc tion Temp. Range C : -55 to 150 ° C Ha ndling Code TU : Tube.


Anpec Electronics APM3048ADU4

TR : Tape & Reel Lead Free Code L : Lea d Free Device XXXXX - Date Code APM304 8AD U4 : APM3048A XXXXX Note: ANPEC l ead-free products contain molding compo unds and 100% matte tin plate terminati on finish; which are fully compliant wi th RoHS and compatible with both SnPb a nd lead-free soldiering operations. ANP EC lead-free products meet or exceed th e lead-free requir.


Anpec Electronics APM3048ADU4

ements of IPC/JEDEC J STD-020C for MSL c lassification at lead-free peak reflow temperature. ANPEC reserves the right t o make changes to improve reliability o r manufacturability without notice, and advise customers to obtain the latest version of relevant information to veri fy before placing orders. Copyright © ANPEC Electronics Corp. Rev. A.1 - Jul. , 2006 1 www.anpec..





Part

APM3048ADU4

Description

Dual MOSFET



Feature


www.DataSheet4U.com APM3048ADU4 Dual En hancement Mode MOSFET (N-and P-Channel) Features • N-Channel 30V/9A, RDS(ON )=21mΩ (typ.) @ VGS=10V RDS(ON)=27m (typ.) @ VGS=4.5V Pin Description D1 D2 • P-Channel -30V/-9A, RDS(ON)=3 6mΩ (typ.) @ VGS= -10V RDS(ON)=46mΩ (typ.) @ VGS=-4.5V S1 G1 S2 G2 • • • Top View of TO-252-4 (3) D1 (3) D2 Super High Dense Cell Design R.
Manufacture

Anpec Electronics

Datasheet
Download APM3048ADU4 Datasheet




 APM3048ADU4
www.DataSheet4U.com
APM3048ADU4
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
N-Channel
30V/9A,
RDS(ON)=21m(typ.) @ VGS=10V
RDS(ON)=27m
(typ.)
@
V =4.5V
GS
P-Channel
-30V/-9A,
RDS(ON)=36m(typ.) @ VGS= -10V
RDS(ON)=46m(typ.) @ VGS=-4.5V
Super High Dense Cell Design
Reliable and Rugged
ESD Rating : 2KV HBM
Lead Free Available (RoHS Compliant)
Applications
Pin Description
D1 D2
S1 G1
S2 G2
Top View of TO-252-4
(3) (3)
D1 D2
(5)
(2) G2
G1
Power Management in LCD monitor/TV
Ordering and Marking Information
S1
(1)
N MOS
S2
(4)
P MOS
APM3048AD
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
U4 : TO-252-4
Operating Junction Temp. Range
C : -55 to 150° C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device
APM3048AD U4 : APM3048A
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Jul., 2006
1
www.anpec.com.tw




 APM3048ADU4
www.DataSheet4U.com
APM3048ADU4
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
VDSS
VGSS
ID a
IDM a
IS a
TJ
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25°C
Pulsed Drain Current
TC=25°C
Diode Continuous Forward Current TC=25°C
Maximum Junction Temperature
Storage Temperature Range
PD Power Dissipation
TC=25°C
TC=100°C
RθJC
RθJA a
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Notes:
a : Surface Mounted on 1in2 pad area, t 10sec.
b : Current limited by bond wire.
N Channel P Channel
30 -30
±20 ±20
9 b -9 b
30 -30
9 -9
150
-55 to 150
25
10
5
50
Unit
V
A
A
°C
W
°C/W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static Characteristics
BVDSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a
Drain-Source On-State
Resistance
VGS=0V, IDS=250µA
VGS=0V, IDS=-250µA
VDS=24V, VGS=0V
TJ=85°C
VDS=-24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VDS=VGS, IDS=-250µA
VGS=±16V, VDS=0V
VGS=±16V, VDS=0V
VGS=10V, IDS=9A
VGS=-10V, IDS=-9A
VGS=4.5V, IDS=5A
VGS=-4.5V, IDS=-5A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
APM3048ADU4
Unit
Min. Typ. Max.
30
V
-30
1
30
µA
-1
-30
1 1.5 2
-1 -1.5 -2
V
±10
±10 µA
21 27
36 45
m
27 34
46 57
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Jul., 2006
2
www.anpec.com.tw




 APM3048ADU4
www.DataSheet4U.com
APM3048ADU4
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM3048ADU4
Unit
Min. Typ. Max.
Diode Characteristics
VSDa Diode Forward Voltage
ISD=2A, VGS=0V
ISD=-2.3A, VGS=0V
N-Ch
P-Ch
Dynamic Characteristics b
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer
Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
VGS=0V,VDS=0V,F=1MHz
N-Channel
VGS=0V,
VDS=15V,
Frequency=1.0MHz
P-Channel
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
N-Channel
VDD=15V, RL=15,
IDS=1A, VGEN=10V,
RG=6
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
td(OFF)
tf
trrb
Qrrb
Turn-off Delay Time
Turn-off Fall Time
P-Channel
VDD=-15V, RL=15,
IDS=-1A, VGEN=-10V,
RG=6
Reverse Recovery Time N-Channel
ISD=9A, dlSD/dt =100A/µs
P-Channel
Reverse Recovery Charge ISD=-9A, dlSD/dt =100A/µs
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
N-Channel
VDS=15V, VGS=10V,
IDS=9A
P-Channel
VDS=-15V, VGS=-10V,
IDS=-9A
Notes:
a : Pulse test ; pulse width300µs, duty cycle2%.
b : Guaranteed by design, not subject to production testing.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.8 1.3
-0.8 -1.3
V
2
10
950
1100
150
150
105
100
11
7
9
10
34
38
12
14
17
15
11
9
20
14
17
20
62
70
23
26
pF
ns
ns
nc
20 27
20 27
2.5
nC
3.5
4.5
3.7
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Jul., 2006
3
www.anpec.com.tw




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