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Preliminary data
SPP08P06P SPB08P06P
SIPMOS ® Power-Transistor
Features
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Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current
P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature
VDS RDS(on) ID
-60 0.3 -8.8
V
W
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A
Type SPP08P06P SPB08P06P
Package
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