High power PNP epitaxial planar bipolar transistor
Description
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2STA1695
High power PNP epitaxial planar bipolar transistor
General features
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Preliminary data
High breakdown voltage VCEO = -140V Complementary to 2STC4468 Typical ft =20MHz Fully characterized at 125 oC
3 2 1
Applications
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Audio power amplifier TO-3P
Description
The device is a PNPtransistor manufactured using new BiT-LA...
