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DFP830

N-Channel MOSFET

Description

www.DataSheet4U.com DFP830 N-Channel MOSFET Features RDS(on) (Max 1.5 )@VGS=10V 1.Gate 2.Drain Gate Charge (Typical 32nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested BVDSS = 500V RDS(ON) = 1.5 ohm ID = 4.5A 3.Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced plan...

DnI

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