DatasheetsPDF.com

2SD1047. D1047 Datasheet

DatasheetsPDF.com

2SD1047. D1047 Datasheet






D1047 2SD1047. Datasheet pdf. Equivalent




D1047 2SD1047. Datasheet pdf. Equivalent





Part

D1047

Description

2SD1047



Feature


Ordering number:680F PNP Epitaxial Plan ar Silicon Transistors NPN Triple Diffu sed Planar Silicon Transistors 2SB817/2 SD1047 140V/12A AF 60W Output Applicati ons Features Β· Capable of being mount ed easily because of onepoint fixing ty pe plastic molded package (Interchangea ble with TO-3). Β· Wide ASO because of on-chip ballast resistance. Β· Good dep enedence of fT on cur.
Manufacture

Sanyo Semicon Device

Datasheet
Download D1047 Datasheet


Sanyo Semicon Device D1047

D1047; rent and excellent high frequency respon ce. Package Dimensions unit:mm 2022A [ 2SB817/2SD1047] The descriptions in pa rentheses are for the 2SB817 only : oth er descriptions than those in parenthes es are common to the 2SB817 and 2SD1047 . 1 : Base 2 : Collector 3 : Emitter Specifications Absolute Maximum Rating s at Ta = 25˚C Parameter Collector-to -Base Voltage Colle.


Sanyo Semicon Device D1047

ctor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Cur rent (Pulse) Collector Dissipation Junc tion Temperature Storage Temperature S ymbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25Λ šC Tc=25˚C Conditions Parameter Sy mbol Conditions Collector Cutoff Curr ent Emitter Cutoff Current DC Current G ain Gain-Bandwidth P.


Sanyo Semicon Device D1047

roduct Output Capacitance ICBO IEBO hFE 1 hFE2 fT Cob VCB=(–)80V, IE=0 VEB=( –)4V, IC=0 VCE=(–)5V, IC=(–)1A VC E=(–)5V, IC=(–)6A VCE=(–)5V, IC=( –)1A VCB=(–)10V, f=1MHz * : The 2S B817/2SD1047 are classified by 1A hFE a s follows : 60 D 120 100 E 200 SANYO : TO-3PB Ratings Unit (–)160 V (β€ “)140 V (–)6 V (–)12 A (–)15 A 100 W 150 ˚C –40 to +150 ˚C Ratings min t.

Part

D1047

Description

2SD1047



Feature


Ordering number:680F PNP Epitaxial Plan ar Silicon Transistors NPN Triple Diffu sed Planar Silicon Transistors 2SB817/2 SD1047 140V/12A AF 60W Output Applicati ons Features Β· Capable of being mount ed easily because of onepoint fixing ty pe plastic molded package (Interchangea ble with TO-3). Β· Wide ASO because of on-chip ballast resistance. Β· Good dep enedence of fT on cur.
Manufacture

Sanyo Semicon Device

Datasheet
Download D1047 Datasheet




 D1047
Ordering number:680F
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
2SB817/2SD1047
140V/12A AF 60W Output Applications
Features
Β· Capable of being mounted easily because of one-
point fixing type plastic molded package (Inter-
changeable with TO-3).
Β· Wide ASO because of on-chip ballast resistance.
Β· Good depenedence of fT on current and excellent
high frequency responce.
Package Dimensions
unit:mm
2022A
[2SB817/2SD1047]
The descriptions in parentheses are for the 2SB817 only :
other descriptions than those in parentheses are common
to the 2SB817 and 2SD1047.
1 : Base
2 : Collector
3 : Emitter
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)1A
VCE=(–)5V, IC=(–)6A
VCE=(–)5V, IC=(–)1A
VCB=(–)10V, f=1MHz
* : The 2SB817/2SD1047 are classified by 1A hFE as follows :
60 D 120 100 E 200
SANYO : TO-3PB
Ratings
Unit
(–)160 V
(–)140 V
(–)6 V
(–)12 A
(–)15 A
100 W
150 ˚C
–40 to +150 ˚C
Ratings
min typ
60*
20
15
(300)
210
max
(–)0.1
(–)0.1
200*
Unit
mA
mA
MHz
pF
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/90595MO (KOTO)/4017KI/6284KI, MT 8-3416/7039 No.680–1/4




 D1047
Parameter
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Fall Time
Storage Time
Switching Time Test Circuit
2SB817/2SD1047
Symbol
Conditions
VBE VCE=(–)5V, IC=(–)1A
VCE(sat) IC=(–)5A, IB=(–)0.5A
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=(–)5mA, IE=0
IC=(–)5mA, RBE=∞
IC=(–)50mA, RBE=∞
IE=(–)5mA, IC=0
See specified Test Circuit
tf
See specified Test Circuit
tstg
See specified Test Circuit
Ratings
Unit
min typ max
1.5 V
0.6
2.5 V
(1.1)
V
(–)160
V
(–)140
V
(–)140
V
(–)6
V
(0.25)
Β΅s
0.26
Β΅s
(0.53)
Β΅s
0.68
Β΅s
(1.61)
Β΅s
6.88
Β΅s
No.680–2/4




 D1047
2SB817/2SD1047
No.680–3/4



Recommended third-party D1047 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)