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K117
2SK117
Description
2SK117 TOSHIBA Field Effect
Transistor
Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage: VGDS = â50 V Low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kâĤ) High input impedance: IGSS = â1 nA (max) (VGS = â30 V) Unit: mm ...
Toshiba Semiconductor
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