DatasheetsPDF.com

Rectifier Diode. 5SDA10D2003 Datasheet

DatasheetsPDF.com

Rectifier Diode. 5SDA10D2003 Datasheet






5SDA10D2003 Diode. Datasheet pdf. Equivalent




5SDA10D2003 Diode. Datasheet pdf. Equivalent





Part

5SDA10D2003

Description

Avalanche Rectifier Diode



Feature


www.DataSheet4U.com Key Parameters VRRM = 2300 IFAVM = 1140 IFSM = 13.5 VF0 = 0.83 rF = 0.30 V A kA V mΩ Avalanch e Rectifier Diode 5SDA 10D2303 Doc. No . 5SYA 1120 - 01 Apr-98 Features • • • • Optimized for line frequ ency rectifiers Low on-state voltage, n arrow VF-bands for parallel operation S elf protected against transient overvol tages Guaranteed maximum avala.
Manufacture

ABB

Datasheet
Download 5SDA10D2003 Datasheet


ABB 5SDA10D2003

5SDA10D2003; nche power dissipation Industry standard housing Blocking Part number VRRM VRS M IRRM PRSM 5SDA 10D2303 2300 2530 ≤ ≤ ≤ 5SDA 10D2003 2000 2200 50 70 50 mA kW kW 5SDA 10D1703 Condition 1700 1 870 f tP tP tP = 50 Hz = 10 ms = 20 µs = 20 µs tP Tj Tj Tj Tj = 10 ms = 160 C = 160°C = 45°C = 160°C VRRM Mec hanical data FM a Mounting force min. m ax. Acceleration Device unclam.


ABB 5SDA10D2003

ped Device clamped Weight Surface creepa ge distance Air strike distance 10 kN 1 2 kN 50 m/s 2 200 m/s 0.25 kg 30 mm 20. 5 mm 2 m DS Da ABB Semiconductors AG www.DataSheet4U.com ABB Semiconductors AG 5SDA 10D2303 On-state IFAVM IFRMS IFSM It VF0 rF VF min VF max 2 Max. a verage on-state current Max. RMS on-sta te current Max. peak non-repetitive sur ge current Limitin.


ABB 5SDA10D2003

g load integral Threshold voltage Slope resistance On-state voltage On-state vo ltage 1140 A 1790 A 13.5 kA 14.5 kA 91 0⋅103 A s 2 2 Half sine wave, TC = 8 5°C tp tp tp tp IF IF = = = = 10 ms 8. 3 ms 10 ms 8.3 ms Tj = Tj = 160°C 25° C Tj = 160°C After surge: VR ≈ 0V 875⋅10 A s 3 0.83 V 0.30 mΩ 1.20 V 1.35 V = 1000 - 3000 A = 1800 A Ther mal Tj RthJC Storage and opera.

Part

5SDA10D2003

Description

Avalanche Rectifier Diode



Feature


www.DataSheet4U.com Key Parameters VRRM = 2300 IFAVM = 1140 IFSM = 13.5 VF0 = 0.83 rF = 0.30 V A kA V mΩ Avalanch e Rectifier Diode 5SDA 10D2303 Doc. No . 5SYA 1120 - 01 Apr-98 Features • • • • Optimized for line frequ ency rectifiers Low on-state voltage, n arrow VF-bands for parallel operation S elf protected against transient overvol tages Guaranteed maximum avala.
Manufacture

ABB

Datasheet
Download 5SDA10D2003 Datasheet




 5SDA10D2003
www.DataSheet4U.com
Key Parameters
VRRM
IFAVM
IFSM
VF0
rF
=
=
=
=
=
2300 V
1140 A
13.5 kA
0.83 V
0.30 m
Features
Avalanche Rectifier Diode
5SDA 10D2303
Doc. No. 5SYA 1120 - 01 Apr-98
Optimized for line frequency rectifiers
Low on-state voltage, narrow VF-bands for parallel operation
Self protected against transient overvoltages
Guaranteed maximum avalanche power dissipation
Industry standard housing
Blocking
Part number 5SDA 10D2303
VRRM
2300
VRSM
2530
IRRM
PRSM
5SDA 10D2003
2000
2200
50 mA
70 kW
50 kW
5SDA 10D1703 Condition
1700
f = 50 Hz
1870
tP = 10 ms
VRRM
tP = 20 µs
tP = 20 µs
tP = 10 ms
Tj = 160°C
Tj = 160°C
Tj = 45°C
Tj = 160°C
Mechanical data
FM Mounting force
min.
max.
a Acceleration
Device unclamped
Device clamped
m Weight
DS Surface creepage distance
Da Air strike distance
10 kN
12 kN
50
200
0.25
m/s2
m/s2
kg
30 mm
20.5 mm
ABB Semiconductors AG




 5SDA10D2003
AwwBwB.DSaetmaSihceoent4dUu.cctoomrs AG
5SDA 10D2303
On-state
IFAVM
IFRMS
IFSM
I2t
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
VF0
rF
VF min
VF max
Threshold voltage
Slope resistance
On-state voltage
On-state voltage
Thermal
Tj Storage and operating
junction temperature range
RthJC
Thermal resistance
junction to case
RthCH
Thermal resistance case to
heat sink
1140 A
1790 A
13.5 kA
14.5 kA
910103 A2s
875103 A2s
0.83 V
0.30 m
1.20 V
1.35 V
Half sine wave, TC = 85°C
tp =
10 ms
tp =
8.3 ms
tp =
10 ms
tp =
8.3 ms
IF = 1000 - 3000 A
IF =
1800 A
-40...160°C
80 K/kW
80 K/kW
40 K/kW
16 K/kW
8 K/kW
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
Tj = 160°C
After surge:
VR 0V
Tj = 160°C
Tj = 25°C
Analytical function for transient thermal impedance:
4
ZthJC(t) = Ri(1- e-t/τ i )
i=1
i
123
4
R (K/kW)
τi (s)
20.95 10.57 7.15
1.33
0.396 0.072 0.009 0.0044
For a given case temperature Tc at ambient temperature Ta the
maximum on-state current can be calculated as follows:
45
40
Zth 35
[K/kW] 30
Fm =10...12 kN
Double Side Cooling
25
20
15
10
5
0
10-3 2 3 4 5 6 7 10-2 2 3 4 5 6 7 10-1 2 3 4 5 5 6 100
t [s]
2 3 4 5 6 7 101
IFAVM = -VF0 +
(VF0)2 + 4 * f 2 * rf * P
2 * f 2 *rf
where P = TJ max - TC or P = TJ max - TA
Rthjc
Rthja
IFAVM (A)
T max (°C)
Rthja (K/kW)
f2 = 1
2.5
3.1
6
P (W)
Tc (°C)
RthJC (K/kW)
VF0 (V)
Ta (°C)
for DC current
for half-sine wave
for 120°el., sine
for 60° el., sine
rF ()
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Doc. No. 5SYA 1120 - 01 Apr-98







Recommended third-party 5SDA10D2003 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)