Flash Memory. K9HAG08U1M Datasheet

K9HAG08U1M Memory. Datasheet pdf. Equivalent

K9HAG08U1M Datasheet
Recommendation K9HAG08U1M Datasheet
Part K9HAG08U1M
Description Flash Memory
Feature K9HAG08U1M; www.DataSheet4U.com K9HAG08U1M K9L8G08U0M K9MBG08U5M Preliminary FLASH MEMORY K9XXG08UXM INFORMA.
Manufacture Samsung
Datasheet
Download K9HAG08U1M Datasheet




Samsung K9HAG08U1M
www.DataSheet4U.com
K9HAG08U1M
K9L8G08U0M K9MBG08U5M
Preliminary
FLASH MEMORY
K9XXG08UXM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
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Samsung K9HAG08U1M
www.DataSheet4U.com
K9HAG08U1M
K9L8G08U0M K9MBG08U5M
Preliminary
FLASH MEMORY
Document TitleD
1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
Revision History
Revision No History
0.0 1. Initial issue
0.1 1.Technical Note is changed
0.2
0.3 1. Endurance is changed. (10K->1.5K)
0.4 1. 4bit/512Byte ECC->3bit/512Byte ECC
2. The number of bad block is changed from 160 to 100 for 8Gb DDP.
3. Note of program/erase characteristics is added.
0.5
1.tPROG 800µs(Typ.) -> 950µs(Typ.)
0.6
1..AC Para. tRHW deleted
2. Retention 10 Year -> 5 Year
Draft Date Remark
Mar. 1. 2005
Apr. 1. 2005
May 3. 2005
June 29. 2005
July 7. 2005
Advance
Advance
Preliminary
Preliminary
Preliminary
Aug. 22. 2005 Preliminary
Aug. 29. 2005 Preliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
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Samsung K9HAG08U1M
www.DataSheet4U.com
K9HAG08U1M
K9L8G08U0M K9MBG08U5M
Preliminary
FLASH MEMORY
1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9L8G08U0M-Y,P
K9HAG08U1M-Y,P
K9MBG08U5M-Y,P
Vcc Range
2.7V ~ 3.6V
Organization
X8
PKG Type
TSOP1
TSOP1-DSP
FEATURES
Voltage Supply : 2.7 V ~ 3.6 V
Organization
- Memory Cell Array : (1G+ 32M)bit x 8bit
- Data Register : (2K + 64)bit x8bit
Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (256K + 8K)Byte
Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 50µs(Max.)
- Serial Access : 30ns(Min.)
*K9MBG08U5M : 50ns(Min.)
Memory Cell : 2bit / Memory Cell
Fast Write Cycle Time
- Program time : 950µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 1.5K Program/Erase Cycles with 3bit/512Byte ECC)
- Data Retention : 5 Years
Command Register Operation
Unique ID for Copyright Protection
Package :
- K9L8G08U0M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9L8G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9HAG08U1M-YCB0/YIB0 : Two K9L8G08U0M stacked
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9HAG08U1M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9MBG08U5M-YCB0/YIB0 : Two K9HAG08U0M package stacked
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9MBG08U5M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
GENERAL DESCRIPTION
Offered in 1Gx8bit, the K9L8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most cost-
effective solution for the solid state mass storage market. A program operation can be performed in typical 950µs on the 2,112-byte
page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block. Data in the data register can be read out
at 30ns(K9MBG08U5M:50ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as com-
mand input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and
internal verification and margining of data. Even the write-intensive systems can take advantage of the K9L8G08U0Ms extended
reliability of 1.5K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The
K9L8G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package and another
ultra high density solution having two 16Gb TSOPI package stacked with four chip selects is also available in TSOPI-DSP.
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