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IPD26N06S2L-35

Infineon Technologies
Part Number IPD26N06S2L-35
Manufacturer Infineon Technologies
Description Power Transistor
Published Jan 29, 2008
Detailed Description www.DataSheet4U.com IPD26N06S2L-35 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Aut...
Datasheet PDF File IPD26N06S2L-35 PDF File

IPD26N06S2L-35
IPD26N06S2L-35

Overview
www.
DataSheet4U.
com IPD26N06S2L-35 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on),max (SMD version) ID 55 35 30 V mΩ A PG-TO252-3-11 Type IPD26N06S2L-35 Package PG-TO252-3-11 Marking 2N06L35 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V1) Pulsed drain current1) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage te...


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