2SC1473A. C1473A Datasheet

C1473A 2SC1473A. Datasheet pdf. Equivalent


Panasonic Semiconductor C1473A
Transistors
2SC1473, 2SC1473A
Silicon NPN triple diffusion planar type
For general amplification
2SC1473 complementary to 2SA1018
2SC1473A complementary to 2SA1767
5.0±0.2
Unit: mm
4.0±0.2
Features
High collector-emitter voltage (Base open) VCEO
High transition frequency fT
0.7±0.1
Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage 2SC1473 VCBO
250
V
c type (Emitter open)
2SC1473A
300
n d tage. ued Collector-emitter voltage 2SC1473 VCEO
200
V
le s ntin (Base open)
2SC1473A
300
a elifecyc disco Emitter-base voltage (Collector open) VEBO
7
V
n u t ed, Collector current
IC
70
mA
duc typ Peak collector current
ICP
100
mA
te tin ur Pro tinued Collector power dissipation
PC
750
mW
fo on Junction temperature
Tj
150
°C
wing disc Storage temperature
Tstg 55 to +150 °C
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
EIAJ: SC-43A
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
ain onludes foell,oplaned Electrical Characteristics Ta = 25°C ± 3°C
inc typ Parameter
Symbol
Conditions
Min Typ Max Unit
c tinued ance Collector-emitter voltage 2SA1473 VCEO IC = 100 µA, IB = 0
200
V
M is con inten (Base open)
2SA1473A
300
/Dis ma Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0
7
D ance type, Collector-emitter cutoff 2SA1473 ICEO VCE = 120 V, Ta = 60°C, IB = 0
ten ce current (Base open)
2SA1473A
VCE = 120 V, IB = 0
Main tenan Forward current transfer ratio *
hFE VCE = 10 V, IC = 5 mA
60
ain Collector-emitter saturation voltage
VCE(sat) IC = 50 mA, IB = 5 mA
ed m Transition frequency
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz 50
(plan Collector output capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
V
1
µA
1
220
1.2
V
80
MHz
10
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
60 to 150 100 to 220
Publication date: March 2004
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C1473A Datasheet
Recommendation C1473A Datasheet
Part C1473A
Description 2SC1473A
Feature C1473A; Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2S.
Manufacture Panasonic Semiconductor
Datasheet
Download C1473A Datasheet




Panasonic Semiconductor C1473A
2SC1473, 2SC1473A
PC Ta
1.0
0.8
IC VCE
IC VBE
120
120
1.8 mA
Ta = 25°C
1.6 mA
100
1.4 mA
IB = 2 mA
100
1.2 mA
25°C
VCE = 10 V
1.0 mA
Ta = 75°C 25°C
80 0.8 mA
80
0.6
0.6 mA
60
60
0.4 mA
0.4
40
40
0.2 mA
0.2
0
0
40
80
120
160
Ambient temperature Ta (°C)
20
0
0
2
4
6
8
10
Collector-emitter voltage VCE (V)
20
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
ce/ 120
n d 100
a e 80
n u 60
te tin 40
20
in n 0
a o 0
M isc 360
D 300
240
180
pe) IC IB
ge. ed ty VCE = 10 V
cycle staiscontinu Ta = 25°C
VCE(sat) IC
100
IC / IB = 10
10
roduct lidfetyped, d 1
ur P tinue Ta = 75°C
25°C
ing fo iscon 0.1
25°C
ludes foell,opwlaned d 0.4 0.8 1.2 1.6 2.0
d inc e typ Base current IB (mA)
0.01
0.1
1
10
100
Collector current IC (mA)
IB VBE
3.0
VCE = 10 V
Ta = 25°C
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0
Base-emitter voltage VBE (V)
/Discontimnuaeintenanc hFE IC
e e, 160
c p VCE = 10 V
aintenannance ty 120
laneMd mainte Ta = 75°C
80
(p 25°C
fT IE
VCB = 10 V
Ta = 25°C
Cob VCB
10
IE = 0
f = 1 MHz
Ta = 25°C
8
6
4
120
25°C
40
2
60
0
0.1
1
10
100
Collector current IC (mA)
0
1
10
100
Emitter current IE (mA)
0
1
10
100
Collector-base voltage VCB (V)
2
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Panasonic Semiconductor C1473A
2SC1473, 2SC1473A
ICBO Ta
104
VCB = 250 V
103
102
IEBO Ta
Safe operation area
104
VEB = 5 V
1 000
Single pulse
Ta = 25°C
103
100 ICP
t = 10 ms
IC
t = 1 ms
DC
102
10
10
10
1
1
0
40 80 120 160 200
Ambient temperature Ta (°C)
1
0
40 80 120 160 200
Ambient temperature Ta (°C)
0.1
1
10
100
1 000
Collector-emitter voltage VCE (V)
MaDinistecnoanntincuee/ d (planeMdaminatiennteannacnec/Deitsycpoen,timnuaeindteinncalnucdeestyfpoell,opwlianngefdoudrisPcroondtiuncutelidfetcyypceled,sdtaisgceo.ntinued type)
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