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SSM3K106TU

Part Number	SSM3K106TU
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel MOSFET
Published	Feb 14, 2008
Detailed Description	SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications • ...
Datasheet	SSM3K106TU PDF File

Overview

SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications • 4 V drive • Low ON-resistance: Ron = 530 mΩ (max) (@VGS = 4 V) Ron = 310 mΩ (max) (@VGS = 10 V) Unit: mm 2.
1±0.
1 1.
7±0.
1 0.
3-+00.
.
015 2.
0±0.
1 0.
65±0.
05 0.
166±0.
05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDS 20 V VGSS ± 20 V ID 1.
2 A IDP 2.
4 PD (Note 1) 800 mW PD (Note 2) 500 Tch 150 °C Tstg −55 to 150 °C Note: Note 1: Note 2: Using continuously under heavy loads (e.
g.
the app...

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SSM3K106TU Silicon N-Channel MOSFET - Toshiba Semiconductor

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