Planar Transistor. 2SC5068A Datasheet

2SC5068A Transistor. Datasheet pdf. Equivalent

Part 2SC5068A
Description Silicon NPN Triple Diffused Planar Transistor
Feature www.DataSheet4U.com 2SC5068A Silicon NPN Triple Diffused Planar July 1993 Preliminary Application.
Manufacture Hitachi
Datasheet
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2SC5068A
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2SC5068A
Silicon NPN Triple Diffused Planar
Application
Character display horizontal deflection output
Features
High breakdown voltage
VCBO = 1500 V, IC = 12 A
High speed switching
t = 0.2 µsec(typ)
f
TO–3PFM (N)
July 1993
Preliminary
1
2
3
1. Base
2. Collector
3. Emitter



2SC5068A
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2SC5068A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector surge current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at Tc = 25°C
Symbol
VCBO
VCEO
VEBO
IC
ic(surge)
PC*1
Tj
Tstg
Ratings
1500
800
6
12
20
50
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Collector to emitter
breakdown voltage
V(BR)CEO
Emitter to base
breakdown voltage
V(BR)EBO
Collector cutoff current ICES
DC current transfer ratio hFE
Collector to emitter
saturation voltage
VCE(sat)
Base to emitter
saturation voltage
VBE(sat)
Fall time
tf
Min Typ Max Unit Test conditions
800 — —
V IC = 10 mA, RBE =
6
——
V IE = 10 mA, IC = 0
— — 500 µA VCE = 1500 V, RBE = 0
— — 38
VCE = 5 V, IC = 1 A
— —5
V IC = 7 A, IB = 1.7 A
— — 1.5 V IC = 7 A, IB = 1.7 A
— 0.2 0.4 µse ICP = 7 A, IB1 = 1.7 A,
c fH=31.5kHz





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