PROCESS
CPS090
Silicon Controlled Rectifier
8.0 Amp Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization
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Glass Passivated Mesa 90 x 90 MILS 8.7 MILS 60 x 30 MILS 22 x 22 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å
GEOMETRY
GROSS...
