A2099 Transistors Datasheet

A2099 Datasheet PDF, Equivalent


Part Number

A2099

Description

PNP / NPN Epitaxial Planar Silicon Transistors

Manufacture

Sanyo Semiconductor

Total Page 5 Pages
PDF Download
Download A2099 Datasheet PDF


A2099
Ordering number : ENN7331
2SA2099 / 2SC5888
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2099 / 2SC5888
High-Current Switching Applications
Applications
Relay drivers, lamp drivers, motor drivers.
Features
www.DataSheet4U.com
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Package Dimensions
unit : mm
2041A
[2SA2099 / 2SC5888]
4.5
10.0 2.8
3.2
Specifications
( ) : 2SA2099
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=(--)40V, IE=0
VEB=(--)4V, IC=0
min
2.4
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Ratings
(--50)60
(--)50
(--)6
(--)10
(--)13
(--)2
2
25
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Ratings
typ
max
Unit
(--)10
µA
(--)10
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2502 TS IM TA-3711 No.7331-1/5

A2099
2SA2099 / 2SC5888
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
www.DataSheet4U.com
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
Symbol
Conditions
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=(--)2V, IC=(--)1A
VCE=(--)5V, IC=(--)1A
VCB=(--)10V, f=1MHz
IC=(--)5A, IB=(--)250mA
IC=(--)5A, IB=(--)250mA
IC=(--)100µA, IE=0
IC=(--)1mA, RBE=
IE=(--)100µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
OUTPUT
INPUT
VR
RB
RL
50+
+
100µF
470µF
VBE= --5V
IC=20IB1= --20IB2=3A
(For PNP, the polarity is reversed.)
VCC=20V
Ratings
min typ max
200 (560)700
(130)200
90(60)
(--250)180 (--500)360
(--)0.93 (--)1.4
(--50)60
(--)50
(--)6
(70)40
(650)1000
(60)80
Unit
MHz
pF
mV
V
V
V
V
ns
ns
ns
--10
2SA2099
--9
--8 --90mA
--7
IC -- VCE
--100mA
--6
--70mA
--60mA
--50mA
--40mA
--30mA
--5 --20mA
--4
--3 --10mA
--2
--1
0 IB=0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Collector-to-Emitter Voltage, VCE -- V IT04794
IC -- VCE
--5.0
2SA2099
--4.5
--20mA
--18m-A-16mA
--4.0 --14mA
--12mA
--3.5
--10mA
--3.0
--8mA
--2.5
--6mA
--2.0
--4mA
--1.5
--1.0 --2mA
--0.5
0
0
IB=0
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Collector-to-Emitter Voltage, VCE -- V IT04796
10
2SC5888
9
8
7
IC -- VCE
40mA
30mA
20mA
6
5 10mA
4
From top
3 100mA
90mA
2 80mA
70mA
1 60mA
0 IB=0 50mA
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Collector-to-Emitter Voltage, VCE -- V IT04795
IC -- VCE
5.0
4.5 12mA
10mA
8mA
4.0
3.5 6mA
3.0
2.5 4mA
2.0
1.5 2mA
1.0 2SC5888
From top
0.5 20mA
0 IB=0 18mA
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT04797
No.7331-2/5


Features Ordering number : ENN7331 2SA2099 / 2SC 5888 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Cu rrent Switching Applications Applicatio ns • Package Dimensions unit : mm 20 41A [2SA2099 / 2SC5888] 10.0 3.2 4.5 2. 8 Relay drivers, lamp drivers, motor d rivers. www.DataSheet4U.com • • • Features Adoption of MBIT proces ses. Large current capacitance. Low col lector-to-emitter saturation voltage. H igh-speed switching. 3.5 7.2 16.0 18. 1 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 0.7 2.55 Specifications ( ) : 2SA 2099 Absolute Maximum Ratings at Ta=25 C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to -Base Voltage Collector Current Collect or Current (Pulse) Base Current Collect or Dissipation Junction Temperature Sto rage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Condition s 2.55 1 : Base 2 : Collector 3 : Emit ter SANYO : TO-220ML 2.55 2.4 Rating s (--50)60 (--)50 (--)6 (--)10 (--)13 (--)2 2 25 150 --55 to +150 Unit V V.
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