SILICON TRANSISTOR. 2N6546 Datasheet

2N6546 TRANSISTOR. Datasheet pdf. Equivalent


Part 2N6546
Description (2N6546 / 2N6547) NPN POWER SILICON TRANSISTOR
Feature TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/525 Devices www.DataSheet4U..
Manufacture Microsemi Corporation
Datasheet
Download 2N6546 Datasheet


This Material Copyrighted By Its Respective Manufacturer Th 2N6546 Datasheet
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MI 2N6546 Datasheet
2N6546 Datasheet
2N6546 2N6547 NPN SILICON POWER TRANSISTOR w w w. c e n t r 2N6546 Datasheet
SavantIC Semiconductor Silicon NPN Power Transistors Produc 2N6546 Datasheet
2N6546 Datasheet
2N6546 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 2N6546 Datasheet
Recommendation Recommendation Datasheet 2N6546 Datasheet




2N6546
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/525
Devices
www.DataSheet4U.com
2N6546
2N6547
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6546 2N6547
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = +250C (1)
@ TC = +1000C (1)
Operating & Storage Temperature Range
VCEO
VCEX
VEBO
IB
IC
PT
Top, Tstg
300 400
600 850
8
10
15
175
100
-65 to +200
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
RθJC
1.0
1) Between TC = +250C and TC = +2000C, linear derating factor (average) = 1.0 W/0C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N6546
2N6547
Collector-Emitter Cutoff Current
VCE = 600 Vdc; VBE = 1.5 Vdc
2N6546
VCE = 850 Vdc; VBE = 1.5 Vdc
Emitter-Base Cutoff Current
2N6547
VEB = 8 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
V(BR)CEO
ICEX
IEBO
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
TO-3 (TO-204AA)*
Unit
0C/W
*See Appendix A for Package
Outline
Min. Max.
Unit
300 Vdc
400
1.0 mAdc
1.0
1.0 mAdc
120101
Page 1 of 2



2N6546
2N6546, 2N6547 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Symbol
Min. Max.
Forward-Current Transfer Ratio
IC = 1 Adc; VCE = 2 Vdc
IC = 5 Adc; VCE = 2 Vdc
hFE
15
12 60
IC = 10 Adc; VCE = 2 Vdc
Base-Emitter Saturated Voltage
IB = 2.0 Adc; IC = 10 Adc
www.DataSheet4U.com Collector-Emitter Saturated Voltage
IB = 2.0 Adc; IC = 10 Adc
IB = 3.0 Adc; IC = 15 Adc
VBE(sat)
VCE(sat)
6
1.6
1.5
5.0
DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 0.1 MHz f 1.0 MHz
hfe
Cobo
6.0 30
500
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 250 Vdc; IC = 10 Adc; IB1 = IB2 = 2 Adc
Turn-Off Time
VCC = 250 Vdc; IC = 10 Adc; IB1 = IB2 = 2 Adc
ton 1.0
toff 4.7
SAFE OPERATING AREA
DC Tests
TC = +250C; tp = 1 s; 1 cycle (See Figure 3 of MIL-PRF-19500/525)
Test 1
VCE = 11.7 Vdc; IC = 15 Adc
Test 2
VCE = 20 Vdc; IC = 8.75 Adc
Test 3
VCE = 250 Vdc; IC = 45 mAdc
2N6546
VCE = 350 Vdc; IC = 30 mAdc
2N6547
Unclamped Inductive lOAD
TC = +250C; duty cycle 10%; RS = 0.1 ; tr = tf 500 ηs (See Figure 4 of MIL-PRF-19500/525)
Test 1
Tp = 5 ms; (vary to obtain IC); RBB1 = 15 ; VBB1 = 38.5 Vdc; RBB2 = 50 ;
VBB2 = -4 Vdc; VCC = 20 Vdc; IC = 15 Adc; L = 10 µH
Test 2
Tp = 5 ms; (vary to obtain IC); RBB1 = 15 ; VBB1 = 38.5 Vdc; RBB2 = 50 ;
VBB2 = -4 Vdc; VCC = 20 Vdc; IC = 100 mAdc; L = 1 mH
Clamped Inductive Load
TA = +250C; duty cycle 5%; Tp = 1.5 ms; (vary to obtain IC); VCC = 20 Vdc; IC = 8 Adc; L = 180 µH
(See Figure 5 of MIL-PRF-19500/525)
Clamped Voltage = 350 Vdc
2N6546
Clamped Voltage = 450 Vdc
2N6547
3.) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Unit
Vdc
Vdc
pF
µs
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)