2SA970. A970 Datasheet

A970 2SA970. Datasheet pdf. Equivalent

A970 Datasheet
Recommendation A970 Datasheet
Part A970
Description 2SA970
Feature A970; www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
Manufacture Toshiba
Datasheet
Download A970 Datasheet




Toshiba A970
2SA970
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA970
Low Noise Audio Amplifier Applications
Low noise :NF = 3dB (typ.) RG = 100 , VCE = 6 V, IC = 100 μA,
f = 1 kHz
: NF = 0.5dB (typ.) RG = 1 k, VCE = 6 V, IC = 100 μA,
f = 1 kHz
High DC current gain: hFE = 200~700
High breakdown voltage: VCEO = 120 V
Low pulse noise. Low 1/f noise
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
120
120
5
100
20
300
125
55~125
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TO-92
SC-43
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5F1B
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.21 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test Condition
ICBO
VCB = −120 V, IE = 0
IEBO
VEB = −5 V, IC = 0
V (BR) CEO IC = −1 mA, IB = 0
hFE
(Note)
VCE = −6 V, IC = −2 mA
VCE (sat)
VBE
fT
Cob
NF
IC = −10 mA, IB = −1 mA
VCE = −6 V, IC = −2 mA
VCE = −6 V, IC = −1 mA
VCB = −10 V, IE = 0, f = 1 MHz
VCE = −6 V, IC = −0.1 mA, f = 10 Hz,
RG = 10 kΩ
VCE = −6 V, IC = −0.1 mA, f = 1 kHz,
RG = 10 kΩ
VCE = −6 V, IC = −0.1 mA, f = 1 kHz,
RG = 100 Ω
Min
120
Typ.
Max
0.1
0.1
Unit
μA
μA
V
200 700
⎯ ⎯ −0.3 V
⎯ −0.65
V
100 MHz
4.0 pF
⎯⎯
6
⎯ ⎯ 2 dB
3
Note: hFE classification GR: 200~400, BL: 350~700
1 2007-11-01



Toshiba A970
2SA970
2 2007-11-01



Toshiba A970
2SA970
3 2007-11-01







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)