Recovery Rectifiers. F1T2G Datasheet

F1T2G Rectifiers. Datasheet pdf. Equivalent

Part F1T2G
Description (F1T1G - F1T7G) Glass Passivated Fast Recovery Rectifiers
Feature F1T1G THRU F1T7G 1.0 AMP. Glass Passivated Fast Recovery Rectifiers Voltage Range 50 to 1000 Volts C.
Manufacture Taiwan Semiconductor
Datasheet
Download F1T2G Datasheet



F1T2G
F1T1G THRU F1T7G
Features
1.0 AMP. Glass Passivated Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
TS-1
Low forward voltage drop
High current capability
High reliability
High surge current capability
www.DataSheet4MU.ceocmhanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Axial leads, solderable per MIL-STD-
202, Method 208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
260/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs.,(2.3kg) tension
Mounting position: Any
Weight: 0.20 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol F1T F1T F1T F1T F1T
1G 2G 3G 4G 5G
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600
Maximum RMS Voltage
VRMS 35 70 140 280 420
Maximum DC Blocking Voltage
VDC 50 100 200 400 600
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
I(AV)
1.0
@TA = 55
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load IFSM
(JEDEC method )
30
Maximum Instantaneous Forward Voltage
@ 1.0A
VF
1.3
Maximum DC Reverse Current @ TA=25
at Rated DC Blocking Voltage @ TA=125
IR
5.0
100
Maximum Reverse Recovery Time ( Note 1 ) Trr
150 250
Typical Junction Capacitance ( Note 2 )
Cj
15
Typical Thermal Resistance ( Note 3 )
RθJA
90
Operating Temperature Range
TJ
-65 to +150
F1T F1T Units
6G 7G
800 1000 V
560 700 V
800 1000 V
A
A
V
uA
uA
500 nS
pF
OC/W
Storage Temperature Range
TSTG
-65 to +150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
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F1T2G
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RATINGS AND CHARACTERISTIC CURVES (F1T1G THRU F1T7G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
(+)
50Vdc
(approx)
(-)
DUT
1W OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
+0.5A
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
1.50
1.25
1.00
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
0.75
0.50
0.25
00
25 50 75 100 125 150 175
AMBIENT TEMPERATURE. (oC)
FIG.4- TYPICAL JUNCTION CAPACITANCE
100
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
30
Tj=250C
20
10
0
1
8.3ms Single Half Sine Wave
JEDEC Method
2
4 6 8 10
20
NUMBER OF CYCLES AT 60Hz
40 60 80 100
FIG.5- TYPICAL FORWARD CHARACTERISTICS
10
10 Tj=250C
1
1 10
REVERSE VOLTAGE. (V)
100
1.0
0.1
.01
.4
Tj=25oC
Pulse Width=300 s
1% Duty Cycle
.6 .8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE. (V)
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