STP7NC80ZFP. 7NC80ZFP Datasheet

7NC80ZFP STP7NC80ZFP. Datasheet pdf. Equivalent

Part 7NC80ZFP
Description STP7NC80ZFP
Feature STP7NC80Z - STP7NC80ZFP STB7NC80Z - STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Z.
Manufacture STMicroelectronics
Total Page 13 Pages
Datasheet
Download 7NC80ZFP Datasheet



7NC80ZFP
STP7NC80Z - STP7NC80ZFP
STB7NC80Z - STB7NC80Z-1
N-CHANNEL 800V - 1.3- 6.5A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STP7NC80Z
www.DataSheet4U.cSoTmP7NC80ZFP
STB7NC80Z
STB7NC80Z-1
800 V
800 V
800 V
800 V
< 1.5
< 1.5
< 1.5
< 1.5
6.5 A
6.5 A
6.5 A
6.5 A
s TYPICAL RDS(on) = 1.3
s EXTREMELY HIGH dv/dt AND CAPABILITY
GATE TO - SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
TO-220
3
1
D2PAK
3
2
1
TO-220FP
123
I2PAK
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ORDERING INFORMATION
SALES TYPE
MARKING
STP7NC80Z
P7NC80Z
STP7NC80ZFP
P7NC80ZFP
STB7NC80ZT4
B7NC80Z
STB7NC80Z-1
B7NC80Z
May 2003
PACKAGE
TO-220
TO-220FP
D2PAK
I2PAK
PACKAGING
TUBE
TUBE
TAPE & REEL
TUBE
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7NC80ZFP
STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
www.DataSheet4U.com ID
IDM ( )
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max.Operating Junction Temperature
( ) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
Value
STP7NC80Z
STB7NC80Z
STB7NC80Z-1
STP7NC80ZFP
800
800
±25
6.5 6.5 (*)
4 4(*)
26 26 (*)
135 40
1.08 0.32
±50
3
3
-- 2000
-65 to 150
150
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220 / D2PAK /
I2PAK
0.93
30
300
TO-220FP
3.13
Unit
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
V
°C
°C
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
6.5
290
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
αT Voltage Thermal Coefficient
Rz Dynamic Resistance
Test Conditions
Igs=± 1mA (Open Drain)
T=25°C Note(3)
ID = 20 mA,
Min.
25
Typ.
1.3
90
Max.
Unit
V
10-4/°C
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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