STP4NK60ZFP. 4NK60ZFP Datasheet

4NK60ZFP STP4NK60ZFP. Datasheet pdf. Equivalent

Part 4NK60ZFP
Description STP4NK60ZFP
Feature STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1 STB4NK60Z-STD4NK60Z-STD4NK60Z-1 N-CHANNEL600V-1.76Ω-4ATO-220/FP/DP.
Manufacture STMicroelectronics
Total Page 16 Pages
Datasheet
Download 4NK60ZFP Datasheet



4NK60ZFP
STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1
STB4NK60Z-STD4NK60Z-STD4NK60Z-1
N-CHANNEL600V-1.76-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK
Zener-Protected SuperMESH™Power MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STP4NK60Z
www.DataSheet4U.cSoTmP4NK60ZFP
STB4NK60Z
STB4NK60Z-1
STD4NK60Z
STD4NK60Z-1
600 V
600 V
600 V
600 V
600 V
600 V
<2
<2
<2
< 2
<2
<2
4 A 70 W
4 A 25 W
4 A 70 W
4 A 70 W
4 A 70 W
4 A 70 W
s TYPICAL RDS(on) = 1.76
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
TO-220
3
1
D2PAK
3
2
1
TO-220FP
3
1
DPAK
123
I2PAK
3
2
1
IPAK
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
s LIGHTING
ORDERING INFORMATION
SALES TYPE
MARKING
STP4NK60Z
P4NK60Z
STP4NK60ZFP
P4NK60ZFP
STB4NK60ZT4
B4NK60Z
STB4NK60Z-1
B4NK60Z
STD4NK60ZT4
STD4NK60Z-1
D4NK60Z
D4NK60Z
March 2003
PACKAGE
TO-220
TO-220FP
D2PAK
I2PAK
DPAK
IPAK
PACKAGING
TUBE
TUBE
TAPE & REEL
TUBE
TAPE & REEL
TUBE
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4NK60ZFP
STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID
www.DataSheet4U.com
IDM ( )
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 4A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
STP4NK60Z
STB4NK60Z
STB4NK60Z-1
4
2.5
16
70
0.56
-
Value
STP4NK60ZFP
STD4NK60Z
STD4NK60Z-1
600
600
± 30
4 (*)
2.5 (*)
16 (*)
25
0.2
3000
4.5
2500
-55 to 150
-55 to 150
4
2.5
16
70
0.56
-
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220
D2PAK
I2PAK
TO-220FP
1.78 5
62.5
300
DPAK
IPAK
1.78
100
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
4
120
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/16





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