Triacs. BT-139 Datasheet

BT-139 Triacs. Datasheet pdf. Equivalent

Part BT-139
Description Triacs
Feature Philips Semiconductors Product specification Triacs BT139 series GENERAL DESCRIPTION Glass passi.
Manufacture Philips
Datasheet
Download BT-139 Datasheet



BT-139
Philips Semiconductors
Triacs
Product specification
BT139 series
GENERAL DESCRIPTION
Glass passivated triacs in a plastic
envelope, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling performance. Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
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QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM
IT(RMS)
ITSM
BT139-
BT139-
BT139-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
500
500F
500G
500
16
140
600
600F
600G
600
16
140
800
800F
800G
800
16
140
V
A
A
PINNING - TO220AB
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
PIN CONFIGURATION
tab
1 23
SYMBOL
T2
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave; Tmb 99 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
over any 20 ms period
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
5001
MAX.
-600
6001
16
140
150
98
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A2s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.200



BT-139
Philips Semiconductors
Triacs
Product specification
BT139 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-mb
Rth j-a
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
MIN.
-
-
-
TYP.
-
-
60
MAX.
1.2
1.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
www.DataSheTetj4=U.2co5m˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
BT139-
... ...F ...G
IGT
Gate trigger current
VD = 12 V; IT = 0.1 A
T2+ G+
-
5 35 25 50 mA
T2+ G-
-
8 35 25 50 mA
T2- G-
- 10 35 25 50 mA
T2- G+ - 22 70 70 100 mA
IL Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
-
7 40 40 60 mA
T2+ G- - 20 60 60 90 mA
T2- G- - 8 40 40 60 mA
T2- G+ - 10 60 60 90 mA
IH Holding current
VD = 12 V; IGT = 0.1 A
- 6 30 30 60 mA
VT On-state voltage
IT = 20 A
- 1.2
1.6
V
VGT
Gate trigger voltage
VD = 12 V; IT = 0.1 A
- 0.7
1.5
V
VD = 400 V; IT = 0.1 A;
0.25 0.4
-
V
Tj = 125 ˚C
ID Off-state leakage current VD = VDRM(max);
- 0.1 0.5 mA
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BT139- ... ...F ...G
dVD/dt
Critical rate of rise of
off-state voltage
VDM = 67% VDRM(max);
100 50 200 250
Tj = 125 ˚C; exponential
waveform; gate open
circuit
dVcom/dt
Critical rate of change of
commutating voltage
VDM = 400 V; Tj = 95 ˚C;
IT(RMS) = 16 A;
dIcom/dt = 7.2 A/ms; gate
open circuit
-
- 10 20
tgt Gate controlled turn-on ITM = 20 A; VD = VDRM(max); - - - 2
time IG = 0.1 A; dIG/dt = 5 A/µs
- V/µs
- V/µs
- µs
September 1997
2
Rev 1.200





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