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TSM2312

Part Number	TSM2312
Manufacturer	Taiwan Semiconductor Company
Description	20V N-Channel Enhancement Mode MOSFET
Published	Jun 25, 2008
Detailed Description	TSM2312 20V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter ...
Datasheet	TSM2312 PDF File

Overview

TSM2312 20V N-Channel MOSFET SOT-23 Pin Definition: 1.
Gate 2.
Source 3.
Drain Key Parameter Performance Parameter Value VDS VGS = 4.
5V RDS(on) (max) VGS = 2.
5V VGS = 1.
8V Qg 20 33 40 51 11 Unit V mΩ nC Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No.
Package Packing TSM2312CX RF SOT-23 3kpcs / 7” Reel TSM2312CX RFG SOT-23 3kpcs / 7” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram N-Channel MOSFET Absolute Maximum Ratings...

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