2SD2349. D2349 Datasheet

D2349 2SD2349. Datasheet pdf. Equivalent

Part D2349
Description 2SD2349
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2349 DESCRIPTION ·.
Manufacture ETC
Datasheet
Download D2349 Datasheet



D2349
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2349
DESCRIPTION
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed
·Low saturation voltage
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·Horizontal deflection output for color TV
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
600
5
±10
±20
5
50
150
-55~150
UNIT
V
V
A
A
A
W



D2349
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2349
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=300mA , IC=0
VCEsat
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VBEsat
Collector-emitter saturation voltage IC=7A ;IB=1.4A
Base-emitter saturation voltage
IC=7A ;IB=1.4A
ICBO Collector cut-off current
VCB=1500V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
fT Transition frequency
IC=0.1A ; VCE=10V
COB Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
VF Diode forward voltage
IF=7A
ts Storage time
tf Fall time
ICP=7A ;IB1=1.4A;fH=15.75kHz
MIN TYP. MAX UNIT
5V
5.0 V
1.5 V
1 mA
83 250 mA
10
69
13
MHz
170 pF
1.8 V
12 µs
0.7 µs
2





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