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SSM6J206FE
High-Speed Switching Applications
Description
SSM6J206FE TOSHIBA Field-Effect
Transistor
Silicon P-Channel MOS Type SSM6J206FE ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 320 mΩ (max) (@VGS = -1.8 V) Ron = 186 mΩ (max) (@VGS = -2.5 V) Ron = 130 mΩ (max) (@VGS = -4.0 V) www.DataSheet4U.com Unit: mm Absolute Maximum Ratings (Ta = 2...
Toshiba Semiconductor
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SSM6J206FE
High-Speed Switching Applications
- Toshiba Semiconductor
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