Dual N-Channel E nhancement Mode Field Effect Transistor
Description
S amHop Microelectronics C orp.
S T U402D
MAY .03 2006
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
www.DataSheet4U.com
F E AT UR E S
( m W ) Max
ID
16A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
30 @ V G S = 10V 40 @ V G S =4.5V
R ugged and reliable. TO252-4L package.
D1 D2
40V
D1/D2
S1
...
