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TE13005D

TEMIC Semiconductors
Part Number TE13005D
Manufacturer TEMIC Semiconductors
Description (TE13004D / TE13005D) Silicon NPN High Voltage Switching Transistor
Published Aug 8, 2008
Detailed Description TE13004D • TE13005D Silicon NPN High Voltage Switching Transistor Features D Monolithic integrated C-E-free-wheel diode ...
Datasheet PDF File TE13005D PDF File

TE13005D
TE13005D


Overview
TE13004D • TE13005D Silicon NPN High Voltage Switching Transistor Features D Monolithic integrated C-E-free-wheel diode D HIGH SPEED technology D Planar passivation D Very short switching times D Very low switching losses D www.
DataSheet4U.
com Very low dynamic saturation D Very low operating temperature D High reverse voltage 14283 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Type TE13004D TE13005D TE13004D TE13005D Symbol VCEO VCEO VCES VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 300 400 600 700 9 6 8 2 4 57 150 –65 to +150 Unit V V V V V A A A A W °C °C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase ≤ 25° C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 2.
2 Unit K/W TELEFUNKEN Semiconductors Rev.
A2, 18-Jul-97 1 (9) TE13004D • TE13005D Electrical Characteristics Tcase = 25°C, unless otherwise specified Parameter Transistor Collector cut-off current Test Conditions VCE = 600 V VCE = 700 V VCE = 600 V; Tcase = 150° C VCE = 700 V; Tcase = 150° C IC = 100 mA; L = 125 mH; Imeasure = 100 mA IE = 1 mA IC = 2 A; IB = 0.
4 A IC = 2 A; IB = 0.
4 A VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 1 A VCE = 2 V; IC = 4 A IC = 2 A; IB = 0.
2 A; t = 1 m s IC = 2 A; IB = 0.
2 A; t = 3 m s VCE = 10 V; IC = 500 mA; f = 1 MHz IF = 2 A IF = 2 A; diF/dt = 10 A/m s IF = 2 A; diF/dt = 5 A/m s; VS = 200 V Type Symbol Min Typ Max 50 50 0.
5 0.
5 300 400 9 0.
5 1.
6 10 10 4 2.
5 0.
6 4 V V MHz Unit mA mA Collector-emitter breakdown voltage (figure 1) www.
DataSheet4U.
com Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC forward current transfer ratio Dynamic y saturation voltage Gain bandwidth product Fr...



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