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AP30G120SW

Advanced Power Electronics
Part Number AP30G120SW
Manufacturer Advanced Power Electronics
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 14, 2008
Detailed Description Advanced Power Electronics Corp. AP30G120SW Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. ...
Datasheet PDF File AP30G120SW PDF File

AP30G120SW
AP30G120SW

Overview
Advanced Power Electronics Corp.
AP30G120SW Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Features ▼ High Speed Switching ▼ Low Saturation Voltage VCES IC VCE(sat)=3.
0V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free G C E TO-3P G Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage +30 IC@TC=25℃ Collector Current 60 IC@TC=100℃ ICM Collector Current Pulsed Collector Current1 30 120 IF@TC=25℃ Diode Forward Current 20 IF@TC=100℃ Diode Forward Current 10 IFM Diode Pulse Forward Current 40 PD@TC=25℃ Maximum Power Dissipation 20...


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