24L01AFJ-W Datasheet: BR24L01AFJ-W





24L01AFJ-W BR24L01AFJ-W Datasheet

Part Number 24L01AFJ-W
Description BR24L01AFJ-W
Manufacture Rohm
Total Page 26 Pages
PDF Download Download 24L01AFJ-W Datasheet PDF

Features: Memory ICs BR24L01A-W / BR24L01AF-W / B R24L01AFJ-W / BR24L01AFV-W / BR24L01AFV M-W 128×8 bit electrically erasable P ROM BR24L01A-W / BR24L01AF-W / BR24L01A FJ-W BR24L01AFV-W / BR24L01AFVM-W The B R24L01A-W series is 2-wire (I2C BUS typ e) serial EEPROMs which are electricall y programmable. www.DataSheet4U.com ∗ I2C BUS is a registered trademark of P hilips. zApplications General purpose zFeatures 1) 128 registers × 8 bits se rial architecture. 2) Single power supp ly (1.8V to 5.5V). 3) Two wire serial i nterface. 4) Self-timed write cycle wit h automatic erase. 5) 8 byte page write mode. 6) Low power consumption. Write (5V) : 1.2mA (Typ.) Read (5V) : 0.2mA ( Typ.) Standby (5V) : 0.1µA (Typ.) 7) D ATA security Write protect feature (WP pin) . Inhibit to WRITE at low VCC. 8) Small package - - - DIP8 / SOP8 / SOP-J 8 / SSOP-B8 / MSOP-8 9) High reliabilit y EEPROM with Double-Cell Structure 10) High reliability fine pattern CMOS tec hnology. 11) Endurance : 1,000,000 erase / write cycles 12) Data ret.

Keywords: 24L01AFJ-W, datasheet, pdf, Rohm, BR24L01AFJ-W, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

Memory ICs
BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W /
BR24L01AFV-W / BR24L01AFVM-W
128×8 bit electrically erasable PROM
BR24L01A-W / BR24L01AF-W / BR24L01AFJ-W
BR24L01AFV-W / BR24L01AFVM-W
The BR24L01A-W series is 2-wire (I2C BUS type) serial EEPROMs which are electrically programmable.
www.DataSheet4U.com
I2C BUS is a registered trademark of Philips.
zApplications
General purpose
zFeatures
1) 128 registers × 8 bits serial architecture.
2) Single power supply (1.8V to 5.5V).
3) Two wire serial interface.
4) Self-timed write cycle with automatic erase.
5) 8 byte page write mode.
6) Low power consumption.
Write (5V) : 1.2mA (Typ.)
Read (5V) : 0.2mA (Typ.)
Standby (5V) : 0.1µA (Typ.)
7) DATA security
Write protect feature (WP pin) .
Inhibit to WRITE at low VCC.
8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8
9) High reliability EEPROM with Double-Cell Structure
10) High reliability fine pattern CMOS technology.
11) Endurance : 1,000,000 erase / write cycles
12) Data retention : 40 years
13) Filtered inputs in SCLSDA for noise suppression.
14) Initial data FFh in all address.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Supply voltage
VCC 0.3 to +6.5
800 (DIP8) 1
450 (SOP8) 2
Power dissipation
Pd 450 (SOP-J8) 3
300 (SSOP-B8) 4
310 (MSOP8) 5
Storage temperature
Tstg 65 to +125
Operating temperature
Topr
40 to +85
Terminal voltage
− −0.3 to VCC+0.3
1 Degradation is done at 8.0mW/°C for operation above 25°C.
2, 3 Degradation is done at 4.5mW/°C for operation above 25°C.
4 Degradation is done at 3.0mW/°C for operation above 25°C.
5 Degradation is done at 3.1mW/°C for operation above 25°C.
Unit
V
mW
°C
°C
V
1/25

                    
                    






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)