K3562 Datasheet PDF


Part Number

K3562

Description

2SK3562

Manufacture

Toshiba Semiconductor

Total Page 6 Pages
PDF Download
Download K3562 Datasheet PDF


Features Datasheet pdf 2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3562 Switching Regulator Application s • • • • Low drain-source ON r esistance: RDS (ON) = 0.9Ω (typ.) High forward transfer admittance: |Yfs| = 5 .0S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA ) Unit: mm Maximum www.DataSheet4U.com Ratings (Ta = 25°C) Characteristics Symbol VDSS VDGR VGSS DC (Note 1) ID ID P PD EAS IAR EAR Tch Tstg Rating 600 60 0 ±30 6 24 40 345 6 4 150 -55~150 A W mJ A mJ °C °C 1: Gate 2: Drain 3: Sou rce Unit V V V Drain-source voltage D rain-gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current Pulse (t = 1 ms) (Note .
Keywords K3562, datasheet, pdf, Toshiba Semiconductor, 2SK3562, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

K3562 Datasheet
2SK3562
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3562
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.)
High forward transfer admittance: |Yfs| = 5.0S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 600 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
www.DataSheet4U.comMaximum Ratings (Ta = 25°C)
www.DataSheet4U.com
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
600
600
±30
6
24
40
345
6
4
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 16.8 mH, IAR = 6 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2
3
1 2004-07-01




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)