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SSM3K04FV
High Speed Switching Applications
Description
SSM3K04FV TOSHIBA Field Effect
Transistor
Silicon N Channel MOS Type SSM3K04FV High Speed Switching Applications 0.22±0.05 Unit: mm 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.13±0.05 With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive High input impedance 1.2±0.05 0.8±0.05 0.4 Low gate threshold voltage: Vth = 0.7~1.3 V Absolute Maxi...
Toshiba Semiconductor
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