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TY30N50E

Motorola
Part Number TY30N50E
Manufacturer Motorola
Description Power Field Effect Transistor
Published Sep 17, 2008
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY30N50E/D Designer's TMOS E-FET .™ Power Field Effect...
Datasheet PDF File TY30N50E PDF File

TY30N50E
TY30N50E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY30N50E/D Designer's TMOS E-FET .
™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain–to–source diode with fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads.
The avalanche energy capability is specified to eliminate the guesswork in designs where inductive www.
DataSheet4U.
com loads are switched and offer additional safety margin against unexpect...


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