UPA1757. A1757 Datasheet

A1757 Datasheet PDF


Part

A1757

Description

UPA1757

Manufacture

NEC

Page 8 Pages
Datasheet
Download A1757 Datasheet


A1757 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1757
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Description
This product is Dual N-Channel MOS Field Effect Transistor
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designed for power management application of
notebook computers, and Li-ion battery application.
Features
Dual MOS FET chips in small package
2.5 V gate drive type and low on-resistance
RDS(on)1 = 23 mΩ (MAX.) (VGS = 4.5 V, ID = 3.5 A)
RDS(on)2 = 32 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A)
Low Ciss Ciss = 750 pF Typ.
Built-in G-S protection diode
Small and surface mount package
(Power SOP8)
Ordering information
Part Number
µ PA1757G
Package
Power SOP8
Package Drawing (Unit : mm)
85
14
5.37 Max.
1 ; Source 1
2 ; Gate 1
7, 8 ; Drain 1
3 ; Source 2
4 ; Gate 2
5, 6 ; Drain 2
6.0 ±0.3
4.4
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
Absolute Maximum Ratings (TA = 25 °C)
Drain to source voltage
VDSS
20 V
Gate to source voltage
VGSS
±12.0
V
Drain current (DC)
Drain current (pulse)Note1
Total power dissipation (1 unit)Note2
Total power dissipation (2 unit)Note2
ID(DC)
ID(pulse)
PT
PT
±7.0 A
±28 A
1.7 W
2.0 W
Channel temperature
Tch 150 °C
Storage temperature
Tstg 55 to +150 °C
Notes 1. PW 10 µ s, Duty Cycle 1 %
2. TA = 25 °C, Mounted on ceramic substrate of 2000 mm2 x 1.1 mm
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may
be applied to this device.
The information in this document is subject to change without notice.
Document No. D12910EJ2V0DS00 (2nd edition)
Date Published September 1998 NS CP (K)
Printed in Japan
© 1998

A1757 Datasheet
Electrical Characteristics (TA = 25 °C)
Characteristics
Symbol
Test Conditions
Drain to source on-state resistance
Gate to source cutoff voltage
Forward transfer admittance
Drain leakage current
Gate to source leakage current
Input capacitance
Output capacitance
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Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body diode forward voltage
RDS(on)1
RDS(on)2
VGS(off)
| yfs |
IDSS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
VGS = 4.5 V, ID = 3.5 A
VGS = 2.5 V, ID = 3.5 A
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 3.5 A
VDS = 20 V, VGS = 0 V
VGS = ±12.0 V, VDS = 0 V
VDS = 10 V
VGS = 0 V
f = 1 MHz
ID = 3.5 A
VGS(on) = 4.0 V
VDD = 10 V
RG = 10
ID = 7.0 A
VDD = 16 V
VGS = 4.0 V
IF = 7.0 A, VGS = 0 V
µ PA1757
MIN. TYP. MAX. Unit
16.2 23 m
22 32 m
0.5 0.8 1.5 V
5.0 13
S
10 µ A
±10 µ A
750 pF
420 pF
140 pF
57 ns
206 ns
593 ns
815 ns
13.0 nC
2.6 nC
5.3 nC
0.75 V
Test circuit 1 Switching time
D.U.T.
RG
PG. RG = 10
VGS
0
τ
τ = 1µ s
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
010 %
VGS(on)
ID 90 %
ID
Wave Form
0 10 %
td(on)
ID
tr td(off)
90 %
90 %
10 %
tf
ton toff
Test circuit 2 Gate charge
D.U.T.
IG = 2 mA
RL
PG. 50
VDD
2


Features Datasheet pdf DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1757 SWITCHING N-CHANNEL POWER M OS FET INDUSTRIAL USE Description This product is Dual N-Channel MOS Field Ef fect Transistor www.DataSheet4U.com Pa ckage Drawing (Unit : mm) designed for power management application of notebo ok computers, and Li-ion battery applic ation. 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max. +0.10 –0.05 Features • Dual MOS FET chips in sma ll package • 2.5 V gate drive type an d low on-resistance RDS(on)1 = 23 mΩ (MAX.) (VGS = 4.5 V, ID = 3.5 A) 1.44 6.0 ±0.3 4.4 0.8 RDS(on)2 = 32 mΩ ( MAX.) (VGS = 2.5 V, ID = 3.5 A) • Bui lt-in G-S protection diode • Small an d surface mount package (Power SOP8) 1. 8 Max. • Low Ciss Ciss = 750 pF Typ . 0.15 0.05 Min. 0.5 ±0.2 0.10 1.2 7 0.40 0.78 Max. 0.12 M +0.10 –0.05 Ordering information Part Number Pack age Power SOP8 µ PA1757G Absolute Ma ximum Ratings (TA = 25 °C) Drain to source voltage Gate to source voltage Drain curre.
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